EPE Association: EPE 1995 - 25 - Dialogue Session DS1a: Devices, Components and Materials

EPE 1995 - 25 - Dialogue Session DS1a: Devices, Components and Materials
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 1995 - Conference > EPE 1995 - 25 - Dialogue Session DS1a: Devices, Components and Materials

   [return to parent folder]

   IGBT MODEL FOR POWER ELECTRONICS SIMULATION
By T. Bonafe; S. El Baroudi; F. Bernot; A. Berthon [View]
[Download]

Abstract: In this paper, the authors present a basic method to modelise Insulated Gate Bipolar Transistor (IGBT). This method based on the description of their internal structure. IGBT representation is made by simple bipolar transistor controlled by a MOSFET transistor. The description of the model is only made by use of linear elements (R, L, C, I, V). Also, it can be used in most of power electronics simulators (SPICE, SUCCESS, SABER, ... ). For the determination of parameters, we only use specific measurements or directly manufacturer characteristics (data sheet). Several simulations and tests are presented to show static and dynamic behaviours of the semiconductor studied. The comparison between simulated and experimental results shows the reliability of this model.

   A PRECISE ANALYTICAL MODEL FOR DIFFUSED POWER DIODES
By T. Kern; R. Kraus; K. Hoffmann [View]
[Download]

Abstract: An analytical model approach for diffused power diodes for use in circuit simulators is presented. In addition to all important physical effects occuring at diodes with abrupt junctions all relevant phenomena concerning diffused emitter profiles are included. The model has shown good agreement between simulation and measurement over a temperature range from 20°C to 100°C.

   UNDERSTANDING WIRE HEATINGS NEAR MAGNETIC COMPONENT AIR GAP
By B. Cogitore; T. P. Keradec; B. Krafft [View]
[Download]

Abstract: Near the air-gap of a wound component, wires are submitted to dramatic heatings. Electromagnetic software simulation is used, first to characterize these losses with the aim of accounting for them inside an equivalent electrical circuit with lumped elements. Then, it allows a simple physical model to he elahorated to estimate these losses. The model is found again using magnetostatics. Thanks to this model, an analytic study is carried out for simple geometries to estimate these losses. Results of simulation and analytical studies are compared with experimental measurements.

   THE SHORT-CIRCUIT BEHAVIOUR OF IGBTs BASED ON DIFFERENT TECHNOLOGIES
By R. Kraus; M. Reddig; K. Hoffmann [View]
[Download]

Abstract: The characteristics of IGBTs operated under short-circuit conditions are investigated by measurements, theoretical examinations and calculations. It is shown that the IGBT structure and technology influences the short-circuit behaviour significantly; the dependence of the short-circuit current on voltage and device temperature, and the onset of the avalanche breakdown are different for the different IGBT types. The physical reasons of the observed effects are explained, and the conclusion is reached that IGBTs with low emitter efficiency and high charge carrier lifetime are superior for short-circuit conditions.

   Temperature Dependence of Avalanche Coefficients for Si in Simulation and Measurements
By H. Brunner; H.-I. Schulze [View]
[Download]

Abstract: The temperature dependence of the avalanche coefficients for Si is investigated by leakage current measurements and device simulation of 5kV and 9kV power diodes at temperatures between 300K and 400K . We propose a modified Chynoweth law with a polynom ansatz for the critical field strength which permits us to calculate the temperature dependence of the breakdown voltage. The ionization rates at room temperature are similar to the previously published data of van Overstraeten et al., although with a somewhat smaller magnitude. The comparison of the temperature dependence of the ionization rates, calculated with our model and with a temperature-dependent modification of Lackner's formula leads to a close agreement.

   IGBT Cell Optimization with Simulation and Comparison with Measurements
By H. Brunner; T. Laska; A. Porst [View]
[Download]

Abstract: New simulation results are presented concerning the optimization of a planar. non-punchthrough IGBT. Lateral and vertical variations of a planar IGBT cell are carried out. A sufficiently large powell spacing leads to a low drift resistance in the n layer . A decreasing of the powell deepness reduces the parasitic JFET effect. Cell optimization is done with a view to IGBT latch-up ruggedness. Our processed IGBT chip design is determined in accordance with the results of the numerical cell optimization and shows the desired behavior.

   CORE LOSSES IN TRANSFORMERS WITH AN ARBITRARY SHAPE OF THE MAGNETIZING CURRENT
By Th. Duerbaum; M. Albach [View]
[Download]

Abstract: This paper presents a practical method for predicting the core losses in magnetic components for an arbitrary shape of the magnetizing current. After comparison of several existing core loss models the calculation of the specific core losses by means of the Steinmetz equation as usually done by the suppliers of magnetic materials will be presented. However, the exponents used in this equation are normally derived from measurements with sinewave currents. In this paper the mathematical background is presented of how to use these data also for the real current shapes occurring in switch mode power supplies. This theory is verified by measurements. The paper ends with a short discussion of the obtained results.

   PMCM CONCEPTION METHODOLOGY: DEVELOPMENT OF A 3D ELECTROTHERMAL SIMULATION TOOL
By S. Raël; E. Clavel; Y. Marechal; Ch. Schaeffer [View]
[Download]

Abstract: Many industrial applications require higher and higher power to volume ratio, so that manufacturers have achieved switch functions, composed of semiconductor chips associated in parallel within power modules. Therefore, we have developed a 3D electrothermal simulation tool which solves heat conduction equation in stationnary condition, and the electrical linear system of the parallel association which takes into account the thermal behaviour of each chip. Thus, we are able to study some electrical and thermal imbalances of the power multi-chips module, and to contribute to a safe and reliable conception.

   EXPERIMENTAL AND NUMERICAL INVESTIGATIONS ON A HARD GTO TURN-ON PROCESS
By Z. Khatir; R. Lallemand [View]
[Download]

Abstract: Turn-on phenomena for GTO thyristors, when the voltage between anode and cathode terminals is near zero, are investigated in both experimental and numerical ways. Overvoltages may appear during these process and may be fatal to the device because of the transient dissipated power. A description of this type of turn-on process have been done. Numerical investigations have shown the influence on the transient behaviour of the gate current values and waveforms, the delay time between GTO on-trigger and anode current rising through the GTO and finally the current rate of rise dI/dt. Particularly, it is shown that P-base structural parameters have a fundamental influence on the tum-on process.

   SMALL-GEOMETRY POWER BJT: NUMERICAL ANALYSIS AND EXPERIMENTAL RESULTS
By G. V. Persiano; A. G. M. Strollo; P. Spirito; A. Patti; S. Sapienza [View]
[Download]

Abstract: An investigation of the dependence of advanced, small-geometry power BJTs' performances upon the geometrical parameters of the elementary cell is carried out. It is shown that, as the emitter window is shrunk, the switching properties are enhanced and the on-state characteristic are degraded, thus imposing a trade-off between static and dynamic performances. A reduction in the base width, on the other side, corresponds to an improvement both of $teady-state and transient characteristics, provided that the base contact is not too close to the emitter window. Both numerical and expeJ:imental results are presented .

   THE INFLUENCE OF THE EPITAXIAL DOPING ON THE TURN-ON LOSSES IN POWER BIPOLAR-MODE FET (BMFET)
By G. V. Persiano; A. G. M. Strollo; P. Spirito [View]
[Download]

Abstract: It is shown that the increase in the epitaxial doping ND is an effective way to largely reduce the turn-on losses, which dramatically affect the switching behaviour of a Bipolar-Mode Field Effect Transistor. Twodimensional numerical analysis of the turn-on transients on resistive and on inductive load points out that the switching process consists of two parts pertaining to the unipolar and to the bipolar modes of operation of the device, the latter being in terms of power losses more important than the former. It is found that a more than 50% reduction in energy losses is obtained in a 1 kV device when the epitaxial doping ND is increased from 2 x 10(13) up to 10(14) cm3. In a 500 V device the same percentage of reduction in energy dissipation is obtained when ND is raised up to 3 X 10(14) cm3. The experimental results agree with the numerical simulations.

   DETERMINATION OF STATIC AND DYNAMIC PERFORMANCE OF SILICON CARBIDE POWER MOSFET DEVICES
By B. Beydoun; H. Tranduc; P. Rossel; G. Charitat; F. Morancho [View]
[Download]

Abstract: In this paper, the performance of the SiC power VDMOS transistor is determined using the tool PMD (Power Mosfet Designer). In a first step, the analysis assesses the theoretical limitations of the "on-state resistance versus voltage handling capability" trade-off. Then, the switching performance of SiC and Si VDMOS structures are compared.

   POWER SEMICONDUCTOR RESISTOR DESIGN AND TECHNOLOGY
By S. S. Asina; E. V. Gorkin [View]
[Download]

Abstract: An original design and technology concept of the power semiconductor disc-type resistor is presented. A main advantage of investigated resistor is that its mounting in the same cooling system with switching semiconductor disc-type devices (as diodes, thyristors) provides decreasing dimensions and increasing reliability of power convertors. Better trade-off between high nominal power and temperature stability of resistance was achieved by the special technology process including electron-irradiation and post-irradiation annealing. A comparison of the results from different irradiation with 3 MeV electrons and post-irradiation annealing parametres influence on resistor characteristics with known diffusion technology is presented. Main parametres of elaborated devices and serial power resistors are assumed in table 1.

   DISCO: A COMPUTER AIDED DESIGN PROGRAM FOR THE SINGLE CAPACITOR SNUBBER IN INVERTER APPLICATIONS
By J. C. Regidor; V. M. Guzman; M. I. Gimenez de Guzman [View]
[Download]

Abstract: Snubber inverter design is a time consuming task requiring trade-offs between critical circuit parameters. The program DISCO calculates single capacitor snubbers and, using the Macintosh Graphic User Interface (GUI), helps the designer in the selection of the best design trade-offs in a completely interactive way.

   A MODIFIED J3 MODEL FOR GTO SIMULATION WITH SPICE
By V. M. Guzman; M. I. Gimenez de Guzman [View]
[Download]

Abstract: This SPICE compatible GTO model, developed from the J3 SCR model, accurately simulates GTO characteristics (controlled gate tum-on and off, Vak, Iak, Iak, tum-off tail). The model is proved simulating the operation of an inverter circuit and comparing the simulated results with measurements taken from the real circuit.

   BIPOLAR SEMICONDUCTOR DEVICE MODELS FOR COMPUTER-AIDED DESIGN IN POWER ELECTRONICS
By Ph. Leturcq; O. Berraies; J.-L. Debrie; P. Gillet; M. A. Kallala; J.-L. Massol [View]
[Download]

Abstract: Charge dynamics in the bases of power bipolar semiconductor devices is governed by a diffusion equation. To solve this equation, an analog method is proposed, using an equivalent electric circuit in the form of Re. lines with variable parameters. This representation constitutes the core of a unified group of bipolar device models devised for the design of power circuits.

   MODELLING LOW AND HIGH FREQUENCY MAGNETIC CORES WITH A GENERALISED DYNAMIC CIRCUIT
By J. G. Zhu; S. Y. R. Hui; V. S. Ramsden [View]
[Download]

Abstract: This paper describes the use of a generalised dynamic magnetic core circuit model for both low and high frequency applications. The behaviour of magnetic cores with any arbitrary flux waveforms is modelled by a simple ladder network consisting of nonlinear inductors and resistors. The non-linear B-H loop and the hysteresis loss are incorporated in distributed non-ideal inductors, and calculated by the Preisach scalar model of hysteresis. The generalised model has been verified by simulations and measurments at both low and high-frequency operations.

   ANALYSIS OF THE IGBT dV/dt IN HARD SWITCIDNG MODE
By F. CaImon; J. P. Chante; B. Reymond; A. Senes [View]
[Download]

Abstract: Based on the physical analysis of the device behaviour, we explain the influence of the IGBT technology (PT or NPT device) and the experimental conditions (junction temperature, load current, gate resistance) on the IGBT voltage rise during the turn-off phase in the hard switching mode without snubber (inductive load). This study has been performed using IGBT experimental measurements and two-dimensional device simulations. The results presented in this paper can allow the users to forecast the dV/dt slope variations.

   INFLUENCE OF THE IGBT EMITTER-GROUND WIRING INDUCTANCE IN A POWER INDUCTIVE LOAD CONVERTER
By F. Sarrus; P. J. Viverge; J. P. Chante; B. Hennevin; M. Piton [View]
[Download]

Abstract: The switching characteristics of an Insulated Gate Bipolar Transistor (IGBT) and a free wheeling diode in a dc-dc converter with an inductive load can be widely influenced by parasitic elements. Particulary we study the emitter-ground inductance effects on the dynamic characteristics of the two former devices. The results are described in order to demonstrate how to use the IGBT and the free-wheeling diode for optimum performances. The study is based on computer simulations and experimental tests. In addition, the conclusions are used to improve hybrid module characteristics.

   Experimental Thermal Parameter Extraction Using Non-Destructive Tests
By E. Farjah; Ch. Schaeffer; R. Perret [View]
[Download]

Abstract: The aim of this paper is to find a simple thermal model based on semiconductor external behavior. The model is based on an experimental extraction of an IGBT thermal parameters. The experimental bench can measure the junction temperature of the IGBT due to several input power dissipation. The gate-source thermosensitive parameter of IGBT is used for the temperature measurement. Three different input power dissipation are tested (step function, impulse function and a pseudo-random input). It is shown that the impulse function response is adequate for exciting all of IGBT thermal time constants. Finally a comparison of IGBT thermal model with experiment is given.

   SHORT CIRCUIT BEHAVIOUR FOR PT AND NPT IGBT DEVICES - PROTECTION AGAINST EXPLOSION OF THE CASE BY FUSES
By S. Duong; S. Raël; C. Schaeffer; J. F. De Palma [View]
[Download]

Abstract: The emergence of high power switching IGBT modules has made it imperative for designers to find means of protecting these devices against explosion. This paper will discuss the short circuit behaviour of IGBTs. A theoretical approach is proposed to find dissipation regions within IGBTs. Non destructive short circuit tests are carried out to compare responses of IGBT of different technologies. It appears that Punch Through and Non Punch Through devices do not behave in the same way. Results obtained from the theoretical investigation are compared with experimental results based on the use of two of the IGBT's Thermosensitive Parameters (TSP) : the PN junction voltage Vj and the gate threshold voltage Vth. Finally, tests have been made to verify if fast fuses for the protection of semiconductors can prevent an IGBT from exploding.

   A NEW CAD SYSTEM TO EVALUATE IGBT LOSSES ON INDUCTlVE LOAD
By F. Profumo; A. Tenconi; G. Griva; S. Facelli [View]
[Download]

Abstract: In this paper the validity of a simplified method, based on few easily obtainable parameters, to calculate the IGBT losses in power electronic systems is proposed and analysed. The method has been tested by means of comparison ,with other methods using more sophisticated models aild the results obtained from all the models have been validated by experimental results.

   MODELING OF IRRADIATED BUFFER-LAYER INSULATED GATE BIPOLAR TRANSISTORS
By w. Fragale; F. Y. Robb; V. Venkatesan [View]
[Download]

Abstract: Second and third generation insulated gate bipolar transistors (IGBT) utilize N+ buffer layers and lifetime killing to improve the trade-off between forward voltage and switching time. Poor agreement between MEDICI (1) simulation and reality was encountered when heavily doped (> 1E17/cm3) N+ buffer layers and short lifetimes were combined. Unrealistically high on-voltages, due to minimal hole transport through the buffer layer, were predicted, but not observed. This paper will discuss modification of the concentration dependent lifetime model and, for the first time, demonstrate the use of MEDICI's new trapped charge advanced application module for simulation of electron irradiated buffer-layer IGBT devices.

   A METHOD FOR DETERMINING THE PARAMETERS OF POWER MOSFET AND IGBT TRANSISTOR MODELS APPLIED IN THE PSPICE PROGRAM
By J. Pilacinski [View]
[Download]

Abstract: In the paper a method is presented for determining basic parameters of MOSFET and IGBT transistor models devised to simulate power electronic circuits using the PSPICE program. The calculation of the model parameters is based on characteristics of elements expressed in an analytic way with the help of the mathematical apparatus of experiment design theory. Starting with equations for the standard level I model, precise formulae for calculating static parameters are derived, and a way of modelling nonlinear capacitances is proposed. An example of the application of the method is provided.

   PARAMETER COMPUTATION OF A PLANAR TRANSFORMER BY 3D FINITE ELEMENT METHOD
By S. Tabaga; L. Pierrat; F. Blanche [View]
[Download]

Abstract: Thin planar transformers must be modelled at high frequency, but the parameters of the equivalent circuit are difficult to compute, because we have to take into account their 3D geometry. In this paper, we present a method of computation of the inductive, capacitive and resistive parameters of a type A planar transformer, based on the 3D finite element method with magnetodynamic and electrostatic formulations. The followed approach has been validated by comparison of simulation results with measurements. The model employed has satisfying accuracy up till 15MHz.

EPE 1995 - 25 - Dialogue Session DS1a: Devices, Components and Materials
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 1995 - Conference > EPE 1995 - 25 - Dialogue Session DS1a: Devices, Components and Materials
	[return to parent folder]

	IGBT MODEL FOR POWER ELECTRONICS SIMULATION By T. Bonafe; S. El Baroudi; F. Bernot; A. Berthon	[View] [Download]
Abstract: In this paper, the authors present a basic method to modelise Insulated Gate Bipolar Transistor (IGBT). This method based on the description of their internal structure. IGBT representation is made by simple bipolar transistor controlled by a MOSFET transistor. The description of the model is only made by use of linear elements (R, L, C, I, V). Also, it can be used in most of power electronics simulators (SPICE, SUCCESS, SABER, ... ). For the determination of parameters, we only use specific measurements or directly manufacturer characteristics (data sheet). Several simulations and tests are presented to show static and dynamic behaviours of the semiconductor studied. The comparison between simulated and experimental results shows the reliability of this model.

	A PRECISE ANALYTICAL MODEL FOR DIFFUSED POWER DIODES By T. Kern; R. Kraus; K. Hoffmann	[View] [Download]
Abstract: An analytical model approach for diffused power diodes for use in circuit simulators is presented. In addition to all important physical effects occuring at diodes with abrupt junctions all relevant phenomena concerning diffused emitter profiles are included. The model has shown good agreement between simulation and measurement over a temperature range from 20°C to 100°C.

	UNDERSTANDING WIRE HEATINGS NEAR MAGNETIC COMPONENT AIR GAP By B. Cogitore; T. P. Keradec; B. Krafft	[View] [Download]
Abstract: Near the air-gap of a wound component, wires are submitted to dramatic heatings. Electromagnetic software simulation is used, first to characterize these losses with the aim of accounting for them inside an equivalent electrical circuit with lumped elements. Then, it allows a simple physical model to he elahorated to estimate these losses. The model is found again using magnetostatics. Thanks to this model, an analytic study is carried out for simple geometries to estimate these losses. Results of simulation and analytical studies are compared with experimental measurements.

	THE SHORT-CIRCUIT BEHAVIOUR OF IGBTs BASED ON DIFFERENT TECHNOLOGIES By R. Kraus; M. Reddig; K. Hoffmann	[View] [Download]
Abstract: The characteristics of IGBTs operated under short-circuit conditions are investigated by measurements, theoretical examinations and calculations. It is shown that the IGBT structure and technology influences the short-circuit behaviour significantly; the dependence of the short-circuit current on voltage and device temperature, and the onset of the avalanche breakdown are different for the different IGBT types. The physical reasons of the observed effects are explained, and the conclusion is reached that IGBTs with low emitter efficiency and high charge carrier lifetime are superior for short-circuit conditions.

	Temperature Dependence of Avalanche Coefficients for Si in Simulation and Measurements By H. Brunner; H.-I. Schulze	[View] [Download]
Abstract: The temperature dependence of the avalanche coefficients for Si is investigated by leakage current measurements and device simulation of 5kV and 9kV power diodes at temperatures between 300K and 400K . We propose a modified Chynoweth law with a polynom ansatz for the critical field strength which permits us to calculate the temperature dependence of the breakdown voltage. The ionization rates at room temperature are similar to the previously published data of van Overstraeten et al., although with a somewhat smaller magnitude. The comparison of the temperature dependence of the ionization rates, calculated with our model and with a temperature-dependent modification of Lackner's formula leads to a close agreement.

	IGBT Cell Optimization with Simulation and Comparison with Measurements By H. Brunner; T. Laska; A. Porst	[View] [Download]
Abstract: New simulation results are presented concerning the optimization of a planar. non-punchthrough IGBT. Lateral and vertical variations of a planar IGBT cell are carried out. A sufficiently large powell spacing leads to a low drift resistance in the n layer . A decreasing of the powell deepness reduces the parasitic JFET effect. Cell optimization is done with a view to IGBT latch-up ruggedness. Our processed IGBT chip design is determined in accordance with the results of the numerical cell optimization and shows the desired behavior.

	CORE LOSSES IN TRANSFORMERS WITH AN ARBITRARY SHAPE OF THE MAGNETIZING CURRENT By Th. Duerbaum; M. Albach	[View] [Download]
Abstract: This paper presents a practical method for predicting the core losses in magnetic components for an arbitrary shape of the magnetizing current. After comparison of several existing core loss models the calculation of the specific core losses by means of the Steinmetz equation as usually done by the suppliers of magnetic materials will be presented. However, the exponents used in this equation are normally derived from measurements with sinewave currents. In this paper the mathematical background is presented of how to use these data also for the real current shapes occurring in switch mode power supplies. This theory is verified by measurements. The paper ends with a short discussion of the obtained results.

	PMCM CONCEPTION METHODOLOGY: DEVELOPMENT OF A 3D ELECTROTHERMAL SIMULATION TOOL By S. Raël; E. Clavel; Y. Marechal; Ch. Schaeffer	[View] [Download]
Abstract: Many industrial applications require higher and higher power to volume ratio, so that manufacturers have achieved switch functions, composed of semiconductor chips associated in parallel within power modules. Therefore, we have developed a 3D electrothermal simulation tool which solves heat conduction equation in stationnary condition, and the electrical linear system of the parallel association which takes into account the thermal behaviour of each chip. Thus, we are able to study some electrical and thermal imbalances of the power multi-chips module, and to contribute to a safe and reliable conception.

	EXPERIMENTAL AND NUMERICAL INVESTIGATIONS ON A HARD GTO TURN-ON PROCESS By Z. Khatir; R. Lallemand	[View] [Download]
Abstract: Turn-on phenomena for GTO thyristors, when the voltage between anode and cathode terminals is near zero, are investigated in both experimental and numerical ways. Overvoltages may appear during these process and may be fatal to the device because of the transient dissipated power. A description of this type of turn-on process have been done. Numerical investigations have shown the influence on the transient behaviour of the gate current values and waveforms, the delay time between GTO on-trigger and anode current rising through the GTO and finally the current rate of rise dI/dt. Particularly, it is shown that P-base structural parameters have a fundamental influence on the tum-on process.

	SMALL-GEOMETRY POWER BJT: NUMERICAL ANALYSIS AND EXPERIMENTAL RESULTS By G. V. Persiano; A. G. M. Strollo; P. Spirito; A. Patti; S. Sapienza	[View] [Download]
Abstract: An investigation of the dependence of advanced, small-geometry power BJTs' performances upon the geometrical parameters of the elementary cell is carried out. It is shown that, as the emitter window is shrunk, the switching properties are enhanced and the on-state characteristic are degraded, thus imposing a trade-off between static and dynamic performances. A reduction in the base width, on the other side, corresponds to an improvement both of $teady-state and transient characteristics, provided that the base contact is not too close to the emitter window. Both numerical and expeJ:imental results are presented .

	THE INFLUENCE OF THE EPITAXIAL DOPING ON THE TURN-ON LOSSES IN POWER BIPOLAR-MODE FET (BMFET) By G. V. Persiano; A. G. M. Strollo; P. Spirito	[View] [Download]
Abstract: It is shown that the increase in the epitaxial doping ND is an effective way to largely reduce the turn-on losses, which dramatically affect the switching behaviour of a Bipolar-Mode Field Effect Transistor. Twodimensional numerical analysis of the turn-on transients on resistive and on inductive load points out that the switching process consists of two parts pertaining to the unipolar and to the bipolar modes of operation of the device, the latter being in terms of power losses more important than the former. It is found that a more than 50% reduction in energy losses is obtained in a 1 kV device when the epitaxial doping ND is increased from 2 x 10(13) up to 10(14) cm3. In a 500 V device the same percentage of reduction in energy dissipation is obtained when ND is raised up to 3 X 10(14) cm3. The experimental results agree with the numerical simulations.

	DETERMINATION OF STATIC AND DYNAMIC PERFORMANCE OF SILICON CARBIDE POWER MOSFET DEVICES By B. Beydoun; H. Tranduc; P. Rossel; G. Charitat; F. Morancho	[View] [Download]
Abstract: In this paper, the performance of the SiC power VDMOS transistor is determined using the tool PMD (Power Mosfet Designer). In a first step, the analysis assesses the theoretical limitations of the "on-state resistance versus voltage handling capability" trade-off. Then, the switching performance of SiC and Si VDMOS structures are compared.

	POWER SEMICONDUCTOR RESISTOR DESIGN AND TECHNOLOGY By S. S. Asina; E. V. Gorkin	[View] [Download]
Abstract: An original design and technology concept of the power semiconductor disc-type resistor is presented. A main advantage of investigated resistor is that its mounting in the same cooling system with switching semiconductor disc-type devices (as diodes, thyristors) provides decreasing dimensions and increasing reliability of power convertors. Better trade-off between high nominal power and temperature stability of resistance was achieved by the special technology process including electron-irradiation and post-irradiation annealing. A comparison of the results from different irradiation with 3 MeV electrons and post-irradiation annealing parametres influence on resistor characteristics with known diffusion technology is presented. Main parametres of elaborated devices and serial power resistors are assumed in table 1.

	DISCO: A COMPUTER AIDED DESIGN PROGRAM FOR THE SINGLE CAPACITOR SNUBBER IN INVERTER APPLICATIONS By J. C. Regidor; V. M. Guzman; M. I. Gimenez de Guzman	[View] [Download]
Abstract: Snubber inverter design is a time consuming task requiring trade-offs between critical circuit parameters. The program DISCO calculates single capacitor snubbers and, using the Macintosh Graphic User Interface (GUI), helps the designer in the selection of the best design trade-offs in a completely interactive way.

	A MODIFIED J3 MODEL FOR GTO SIMULATION WITH SPICE By V. M. Guzman; M. I. Gimenez de Guzman	[View] [Download]
Abstract: This SPICE compatible GTO model, developed from the J3 SCR model, accurately simulates GTO characteristics (controlled gate tum-on and off, Vak, Iak, Iak, tum-off tail). The model is proved simulating the operation of an inverter circuit and comparing the simulated results with measurements taken from the real circuit.

	BIPOLAR SEMICONDUCTOR DEVICE MODELS FOR COMPUTER-AIDED DESIGN IN POWER ELECTRONICS By Ph. Leturcq; O. Berraies; J.-L. Debrie; P. Gillet; M. A. Kallala; J.-L. Massol	[View] [Download]
Abstract: Charge dynamics in the bases of power bipolar semiconductor devices is governed by a diffusion equation. To solve this equation, an analog method is proposed, using an equivalent electric circuit in the form of Re. lines with variable parameters. This representation constitutes the core of a unified group of bipolar device models devised for the design of power circuits.

	MODELLING LOW AND HIGH FREQUENCY MAGNETIC CORES WITH A GENERALISED DYNAMIC CIRCUIT By J. G. Zhu; S. Y. R. Hui; V. S. Ramsden	[View] [Download]
Abstract: This paper describes the use of a generalised dynamic magnetic core circuit model for both low and high frequency applications. The behaviour of magnetic cores with any arbitrary flux waveforms is modelled by a simple ladder network consisting of nonlinear inductors and resistors. The non-linear B-H loop and the hysteresis loss are incorporated in distributed non-ideal inductors, and calculated by the Preisach scalar model of hysteresis. The generalised model has been verified by simulations and measurments at both low and high-frequency operations.

	ANALYSIS OF THE IGBT dV/dt IN HARD SWITCIDNG MODE By F. CaImon; J. P. Chante; B. Reymond; A. Senes	[View] [Download]
Abstract: Based on the physical analysis of the device behaviour, we explain the influence of the IGBT technology (PT or NPT device) and the experimental conditions (junction temperature, load current, gate resistance) on the IGBT voltage rise during the turn-off phase in the hard switching mode without snubber (inductive load). This study has been performed using IGBT experimental measurements and two-dimensional device simulations. The results presented in this paper can allow the users to forecast the dV/dt slope variations.

	INFLUENCE OF THE IGBT EMITTER-GROUND WIRING INDUCTANCE IN A POWER INDUCTIVE LOAD CONVERTER By F. Sarrus; P. J. Viverge; J. P. Chante; B. Hennevin; M. Piton	[View] [Download]
Abstract: The switching characteristics of an Insulated Gate Bipolar Transistor (IGBT) and a free wheeling diode in a dc-dc converter with an inductive load can be widely influenced by parasitic elements. Particulary we study the emitter-ground inductance effects on the dynamic characteristics of the two former devices. The results are described in order to demonstrate how to use the IGBT and the free-wheeling diode for optimum performances. The study is based on computer simulations and experimental tests. In addition, the conclusions are used to improve hybrid module characteristics.

	Experimental Thermal Parameter Extraction Using Non-Destructive Tests By E. Farjah; Ch. Schaeffer; R. Perret	[View] [Download]
Abstract: The aim of this paper is to find a simple thermal model based on semiconductor external behavior. The model is based on an experimental extraction of an IGBT thermal parameters. The experimental bench can measure the junction temperature of the IGBT due to several input power dissipation. The gate-source thermosensitive parameter of IGBT is used for the temperature measurement. Three different input power dissipation are tested (step function, impulse function and a pseudo-random input). It is shown that the impulse function response is adequate for exciting all of IGBT thermal time constants. Finally a comparison of IGBT thermal model with experiment is given.

	SHORT CIRCUIT BEHAVIOUR FOR PT AND NPT IGBT DEVICES - PROTECTION AGAINST EXPLOSION OF THE CASE BY FUSES By S. Duong; S. Raël; C. Schaeffer; J. F. De Palma	[View] [Download]
Abstract: The emergence of high power switching IGBT modules has made it imperative for designers to find means of protecting these devices against explosion. This paper will discuss the short circuit behaviour of IGBTs. A theoretical approach is proposed to find dissipation regions within IGBTs. Non destructive short circuit tests are carried out to compare responses of IGBT of different technologies. It appears that Punch Through and Non Punch Through devices do not behave in the same way. Results obtained from the theoretical investigation are compared with experimental results based on the use of two of the IGBT's Thermosensitive Parameters (TSP) : the PN junction voltage Vj and the gate threshold voltage Vth. Finally, tests have been made to verify if fast fuses for the protection of semiconductors can prevent an IGBT from exploding.

	A NEW CAD SYSTEM TO EVALUATE IGBT LOSSES ON INDUCTlVE LOAD By F. Profumo; A. Tenconi; G. Griva; S. Facelli	[View] [Download]
Abstract: In this paper the validity of a simplified method, based on few easily obtainable parameters, to calculate the IGBT losses in power electronic systems is proposed and analysed. The method has been tested by means of comparison ,with other methods using more sophisticated models aild the results obtained from all the models have been validated by experimental results.

	MODELING OF IRRADIATED BUFFER-LAYER INSULATED GATE BIPOLAR TRANSISTORS By w. Fragale; F. Y. Robb; V. Venkatesan	[View] [Download]
Abstract: Second and third generation insulated gate bipolar transistors (IGBT) utilize N+ buffer layers and lifetime killing to improve the trade-off between forward voltage and switching time. Poor agreement between MEDICI (1) simulation and reality was encountered when heavily doped (> 1E17/cm3) N+ buffer layers and short lifetimes were combined. Unrealistically high on-voltages, due to minimal hole transport through the buffer layer, were predicted, but not observed. This paper will discuss modification of the concentration dependent lifetime model and, for the first time, demonstrate the use of MEDICI's new trapped charge advanced application module for simulation of electron irradiated buffer-layer IGBT devices.

	A METHOD FOR DETERMINING THE PARAMETERS OF POWER MOSFET AND IGBT TRANSISTOR MODELS APPLIED IN THE PSPICE PROGRAM By J. Pilacinski	[View] [Download]
Abstract: In the paper a method is presented for determining basic parameters of MOSFET and IGBT transistor models devised to simulate power electronic circuits using the PSPICE program. The calculation of the model parameters is based on characteristics of elements expressed in an analytic way with the help of the mathematical apparatus of experiment design theory. Starting with equations for the standard level I model, precise formulae for calculating static parameters are derived, and a way of modelling nonlinear capacitances is proposed. An example of the application of the method is provided.

	PARAMETER COMPUTATION OF A PLANAR TRANSFORMER BY 3D FINITE ELEMENT METHOD By S. Tabaga; L. Pierrat; F. Blanche	[View] [Download]
Abstract: Thin planar transformers must be modelled at high frequency, but the parameters of the equivalent circuit are difficult to compute, because we have to take into account their 3D geometry. In this paper, we present a method of computation of the inductive, capacitive and resistive parameters of a type A planar transformer, based on the 3D finite element method with magnetodynamic and electrostatic formulations. The followed approach has been validated by comparison of simulation results with measurements. The model employed has satisfying accuracy up till 15MHz.