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Experimental Thermal Parameter Extraction Using Non-Destructive Tests
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| Author(s) |
E. Farjah; Ch. Schaeffer; R. Perret |
| Abstract |
The aim of this paper is to find a simple thermal model based on semiconductor
external behavior. The model is based on an experimental extraction of an IGBT thermal parameters. The experimental bench can measure the junction temperature of the IGBT due to several input power dissipation. The gate-source thermosensitive parameter of IGBT is used for the temperature measurement. Three different input power dissipation are tested (step
function, impulse function and a pseudo-random input). It is shown that the impulse function response is adequate for exciting all of IGBT thermal time constants. Finally a comparison of
IGBT thermal model with experiment is given. |
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| Filename: | Unnamed file |
| Filesize: | 213.2 KB |
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| Type |
Members Only |
| Date |
Last modified 2018-04-12 by System |
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