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A METHOD FOR DETERMINING THE PARAMETERS OF POWER MOSFET AND IGBT TRANSISTOR MODELS APPLIED IN THE PSPICE PROGRAM
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| Author(s) |
J. Pilacinski |
| Abstract |
In the paper a method is presented for determining basic parameters of MOSFET and IGBT transistor models devised to simulate power electronic circuits using the PSPICE program. The
calculation of the model parameters is based on characteristics of elements expressed in an analytic way with the help of the mathematical apparatus of experiment design theory. Starting with equations for the standard level I model, precise formulae for calculating static parameters are derived, and a way of
modelling nonlinear capacitances is proposed. An example of the application of the method is provided. |
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| Filename: | Unnamed file |
| Filesize: | 273 KB |
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| Type |
Members Only |
| Date |
Last modified 2018-04-12 by System |
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