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Temperature Dependence of Avalanche Coefficients for Si in Simulation and Measurements
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| Author(s) |
H. Brunner; H.-I. Schulze |
| Abstract |
The temperature dependence of the avalanche coefficients for Si is investigated by leakage current measurements and device simulation of 5kV and 9kV power diodes at temperatures between 300K and 400K . We propose a modified Chynoweth law with a polynom ansatz for the critical field strength which permits us to calculate the temperature dependence of the breakdown voltage. The ionization rates at room temperature are similar to the previously published data of van
Overstraeten et al., although with a somewhat smaller magnitude. The comparison of the temperature
dependence of the ionization rates, calculated with our model and with a temperature-dependent modification of Lackner's formula leads to a close agreement. |
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| Filename: | Unnamed file |
| Filesize: | 291.9 KB |
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| Type |
Members Only |
| Date |
Last modified 2018-04-12 by System |
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