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POWER SEMICONDUCTOR RESISTOR DESIGN AND TECHNOLOGY
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| Author(s) |
S. S. Asina; E. V. Gorkin |
| Abstract |
An original design and technology concept of the power semiconductor disc-type resistor is presented. A main advantage of investigated resistor is that its mounting in the same cooling system with switching semiconductor disc-type devices (as diodes, thyristors) provides decreasing dimensions and increasing reliability of power convertors. Better trade-off between high nominal power and temperature stability of resistance was achieved by the special technology process including electron-irradiation and post-irradiation
annealing. A comparison of the results from different irradiation with 3 MeV electrons and post-irradiation annealing parametres influence on resistor characteristics with known diffusion technology is presented. Main parametres of elaborated devices and serial power resistors are assumed in
table 1. |
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| Filename: | Unnamed file |
| Filesize: | 214.3 KB |
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| Type |
Members Only |
| Date |
Last modified 2018-04-12 by System |
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