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SHORT CIRCUIT BEHAVIOUR FOR PT AND NPT IGBT DEVICES - PROTECTION AGAINST EXPLOSION OF THE CASE BY FUSES
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| Author(s) |
S. Duong; S. Raël; C. Schaeffer; J. F. De Palma |
| Abstract |
The emergence of high power switching IGBT modules has made it imperative for designers to find means of protecting these devices against explosion. This paper will discuss the short circuit behaviour of IGBTs. A theoretical approach is proposed to find dissipation regions within IGBTs. Non destructive short circuit tests are carried out to compare responses of IGBT of different technologies. It appears that Punch Through and Non Punch Through devices do not behave in the
same way. Results obtained from the theoretical investigation are compared with experimental results based on the use of two of the IGBT's Thermosensitive Parameters (TSP) : the PN junction voltage Vj and the gate threshold voltage Vth. Finally, tests have been made to verify if fast fuses for the protection of semiconductors can prevent an IGBT from exploding. |
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| Filename: | Unnamed file |
| Filesize: | 407.3 KB |
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| Type |
Members Only |
| Date |
Last modified 2018-04-12 by System |
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