| |
ANALYSIS OF THE IGBT dV/dt IN HARD SWITCIDNG MODE
| [View]
[Download]
|
| Author(s) |
F. CaImon; J. P. Chante; B. Reymond; A. Senes |
| Abstract |
Based on the physical analysis of the device behaviour, we explain the influence of the IGBT technology (PT or NPT device) and the experimental conditions (junction temperature, load current, gate resistance) on the IGBT voltage rise during the turn-off phase in the hard switching mode without snubber (inductive load). This study has been performed using IGBT experimental measurements and two-dimensional device simulations.
The results presented in this paper can allow the users to forecast the dV/dt slope variations. |
| Download |
| Filename: | Unnamed file |
| Filesize: | 419.7 KB |
|
| Type |
Members Only |
| Date |
Last modified 2018-04-12 by System |
| |
 |