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THE SHORT-CIRCUIT BEHAVIOUR OF IGBTs BASED ON DIFFERENT TECHNOLOGIES
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| Author(s) |
R. Kraus; M. Reddig; K. Hoffmann |
| Abstract |
The characteristics of IGBTs operated under short-circuit conditions are investigated by measurements, theoretical examinations and calculations. It is shown that the IGBT structure and technology influences the short-circuit behaviour significantly;
the dependence of the short-circuit current on voltage and device temperature, and the onset of the avalanche breakdown are different for the different IGBT types. The physical
reasons of the observed effects are explained, and the conclusion is reached that IGBTs with low emitter efficiency and high charge carrier lifetime are superior for short-circuit
conditions. |
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| Filename: | Unnamed file |
| Filesize: | 291.5 KB |
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| Type |
Members Only |
| Date |
Last modified 2018-04-12 by System |
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