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DETERMINATION OF STATIC AND DYNAMIC PERFORMANCE OF SILICON CARBIDE POWER MOSFET DEVICES
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| Author(s) |
B. Beydoun; H. Tranduc; P. Rossel; G. Charitat; F. Morancho |
| Abstract |
In this paper, the performance of the SiC power VDMOS transistor is determined
using the tool PMD (Power Mosfet Designer). In a first step, the analysis assesses the theoretical limitations of the "on-state resistance versus voltage handling capability" trade-off. Then, the switching performance of SiC and Si VDMOS structures are compared. |
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| Filename: | Unnamed file |
| Filesize: | 432.2 KB |
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| Type |
Members Only |
| Date |
Last modified 2018-04-12 by System |
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