| Abstract |
Turn-on phenomena for GTO thyristors, when the voltage between anode and
cathode terminals is near zero, are investigated in both experimental and numerical ways. Overvoltages may appear during these process and may be fatal to the device because of the
transient dissipated power. A description of this type of turn-on process have been done.
Numerical investigations have shown the influence on the transient behaviour of the gate current values and waveforms, the delay time between GTO on-trigger and anode current rising through the GTO and finally the current rate of rise dI/dt. Particularly, it is shown that P-base structural parameters have a fundamental influence on the tum-on process. |
