| Abstract |
In this paper, the authors present a basic method to modelise Insulated Gate Bipolar Transistor (IGBT). This method based on the description of their internal structure. IGBT representation is made by simple bipolar transistor controlled by a MOSFET transistor. The description of the model is only made by use of linear elements (R, L, C, I, V). Also, it can be
used in most of power electronics simulators (SPICE, SUCCESS, SABER, ... ). For the determination of parameters, we only use specific measurements or directly manufacturer
characteristics (data sheet). Several simulations and tests are presented to show static and dynamic behaviours of the semiconductor studied. The comparison between simulated and
experimental results shows the reliability of this model. |
