| Abstract |
Second and third generation insulated gate bipolar transistors (IGBT) utilize N+ buffer layers and lifetime killing to improve the trade-off between forward voltage and switching time. Poor agreement between MEDICI (1) simulation and reality was encountered when heavily doped (> 1E17/cm3) N+ buffer layers and short lifetimes were combined. Unrealistically high on-voltages, due to minimal hole transport through the buffer layer, were predicted, but not observed. This paper will discuss modification of the concentration dependent lifetime model and, for the first time, demonstrate the use of MEDICI's new trapped charge
advanced application module for simulation of electron irradiated buffer-layer IGBT devices. |
