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THE INFLUENCE OF THE EPITAXIAL DOPING ON THE TURN-ON LOSSES IN POWER BIPOLAR-MODE FET (BMFET)
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| Author(s) |
G. V. Persiano; A. G. M. Strollo; P. Spirito |
| Abstract |
It is shown that the increase in the epitaxial doping ND is an effective way to largely reduce the turn-on losses, which dramatically affect the switching behaviour of a Bipolar-Mode Field Effect Transistor. Twodimensional numerical analysis of the turn-on transients on resistive and on inductive load points out that the switching process consists of two parts pertaining to the unipolar and to the bipolar modes of operation of the device, the latter being in terms of power losses more important than the former. It is found that a more than 50% reduction in energy losses is obtained in a 1 kV device when the epitaxial doping ND is increased from 2 x 10(13) up to 10(14) cm3. In a 500 V device the same percentage of reduction in energy dissipation is obtained when ND is raised up to 3 X 10(14) cm3. The experimental results agree with the numerical simulations. |
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| Filesize: | 353.9 KB |
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| Type |
Members Only |
| Date |
Last modified 2018-04-12 by System |
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