| |
INFLUENCE OF THE IGBT EMITTER-GROUND WIRING INDUCTANCE IN A POWER INDUCTIVE LOAD CONVERTER
| [View]
[Download]
|
| Author(s) |
F. Sarrus; P. J. Viverge; J. P. Chante; B. Hennevin; M. Piton |
| Abstract |
The switching characteristics of an Insulated Gate Bipolar Transistor
(IGBT) and a free wheeling diode in a dc-dc converter with an inductive load can be widely influenced by parasitic elements. Particulary we study the emitter-ground inductance effects on the dynamic characteristics of the two former devices. The results are described in order to demonstrate how to use the IGBT and the free-wheeling diode for optimum performances. The study is based on computer simulations and experimental tests. In addition, the conclusions are used to improve hybrid module characteristics. |
| Download |
| Filename: | Unnamed file |
| Filesize: | 288.1 KB |
|
| Type |
Members Only |
| Date |
Last modified 2018-04-12 by System |
| |
 |