EPE Association: EPE 2003 - Topic 01e: Device Characterization and Applications

EPE 2003 - Topic 01e: Device Characterization and Applications
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2003 - Conference > EPE 2003 - Topic 01: DEVICES > EPE 2003 - Topic 01e: Device Characterization and Applications

   [return to parent folder]

   Magnetic field distribution in embedded passive integrated circuits
By S. Schuh; M. Albach [View]
[Download]

Abstract: The integration of passive components in printed circuit boards by using structured layers of different material leads to completely new technical challenges, both in technological realisations and in simulations or modelling of the embedded components. In this paper the influence of FPC foils (Ferrite Polymer Compounds) on the magnetic field distribution and thus on the inductive coupling mechanisms between several loops is analytically calculated and verified by measurements.

   An application technique of a novel IGBT with reverse blocking capability for a direct linked type converter
By A. Odaka; H. Fujimoto; J-i. Itoh; M. Takei; S. Igarashi; N. Eguchi; K. Ueno [View]
[Download]

Abstract: Aiming at the application to the AC-AC direct-linked-type converters, the authors developed a novel IGBT with reverse blocking capability (RB-IGBT) and a novel commutation method that does not cause the commutation failure. This paper describes the characteristics of the RB-IGBT, experimental results of commutation, and efficiency measurement result in the case of applying the RB-IGBT to an AC-AC buck converter.

   Challenges in using the latest generation of IGBTs in traction converters
By M. M. Bakran; H-G. Eckel; M. Helsper; A. Nagel [View]
[Download]

Abstract: The latest generation of IGBTs feature characteristics like field-stop design or trench design. For the high-power high-voltage application as used in traction, the user is confronted with a new switching behavior. It will be shown how the IGBT and diode turn-off characteristics change and how sensitive it is to parasitic circuit characteristics.

   First inverter using silicon carbide power switches only
By C. Rebbereh; H. Schierling; M. Braun [View]
[Download]

Abstract: In inverter technology the junction temperature of the power switches is a determining parameter for the design. In this paper an inverter concept using normally-on silicon carbide vertical junction field effect transistors (SiC VJFET) is presented, using only six power semiconductor elements and being able to run at notably higher temperatures and opening the chance to build more compact devices.

   The soft-switching tester and application
By I. Feno; P. Spanik; I. Lokseninec [View]
[Download]

Abstract: An effort to experimentally evaluate the classical and new soft-switching techniques led to a new “tester” development and construction. The purpose of this equipment is to evaluate individual loss components that are inherent to a semiconductor device brand and individual soft-switching techniques used. A construction design and individual schematic diagrams of the tester are presented. Application examples of the tester and experimental results are shown as well.

   Current capability and power density of supercapacitors: conditions on energy efficiency
By P. Barrade; A. Rufer [View]
[Download]

Abstract: Supercapacitors are components for energy storage. Due to their series resistors, the energy efficiency of supercapacitors can be low. In this paper, the unloading of supercapacitors with constant current and power are studied, to identify and take into account the energy efficiency and the power density of supercapacitors.

   Mapping of silicon carbide electrical properties by optical techniques
By J.M. Bluet; I. El Harrouni; M. Mermoux; F. Baillet; G. Guillot [View]
[Download]

Abstract: The potential of silicon carbide for power devices realization is well known. Nevertheless, despite great progress in material growth, the industrial applications are still limited by the structural defects density and the inhomogeneous distribution of electrical properties. The required progress in material growth necessitates rapid, non destructive and accurate characterizations tools. Toward this end we developed scanning photoluminescence and Raman spectroscopy. The complementarity of the two techniques gives information on defects nature and on their impact on devices performance without using chemical etching and also enables the mapping of electrical properties without contact formation. The optical signatures of micropipes, screw dislocation and triangular defects are presented. The gettering effect of deep traps by micropipes and screw dislocation is evidenced. Finally, the methods to obtain minority carrier lifetime, free electron concentration and mobility mappings at the wafer scale are presented.

   Comparison of IGBT and MOSFET performances in motor drives with emphasis on the reverse current conduction through the devices
By G. Belverde; C. Cavallaro; C. Guastella; M. Melito; S. Musumeci; A. Raciti [View]
[Download]

Abstract: The paper deals with a comparative investigation, in a typical motor control application, of the performances of IGBTs and a novel high-voltage family of power MOSFETs, belonging to the super junction group devices, with intrinsic fast-recovery diodes. This new power MOSFETs show very interesting characteristics in terms of both die size reduction and switching performances. The conduction loss reductions along with the improved body-diode characteristics allow these devices to be competitors of the IGBTs in the field of low-power motor drive applications. In particular, in the paper the comparison is performed between the performance of the MOSFET, with its body-diode, in respect of the “chip-to-chip” solution, which has been considered for the IGBT and diode. Finally, the main results of the experimental investigation in a case study, which has been realized to drive an AC motor, are reported. The specific application has been considered looking for a better understanding of the device area of applications in terms of switching frequency and load current.

   Dynamic voltage sharing of series connected IGBTs using passive snubbers and active clamping
By H. Jacobs; J. Petzoldt; T. Reimann; R. Krümmer [View]
[Download]

Abstract: This paper presents an investigation of series connected IGBTs and diodes using passive snubbers controlling dv/dt, combined with active clamping of voltages across each switch. A comparison of switching losses depending on parameters, clamping voltage, gate drive delay times and capacitor size of the snubber is done by experimental measurements.

   Adaption of IGBT switching behaviour by means of active gate control for low and medium power
By M. Helsper; F. W. Fuchs [View]
[Download]

Abstract: Active gate drive control methods for 1200V-IGBTs of low and medium power have been investigated. The control methods di/dt control, two step gate resisitor and du/dt-control have been investigated separately. For turn-on the di/dt control gives promising results. For turn-off one single method can’t fulfil the needs for an optimal behaviour alone. However a combination of two step gate resistor control and di/dt control is favourable here. The selected methods enable full adaptation to the application and give significant lower turn-off delay time, losses and overvoltage.

   Characterisation of power devices for extreme low temperature operation
By S. Yang; A. J. Forsyth [View]
[Download]

Abstract: The design, construction and performance are described of a cryogenic test chamber for power semiconductor devices. The test system has the capability of exercising devices dynamically at up to 600 V and 100 A at closely controlled temperatures, which may range from room temperature down to 20 K. The electrical layout and instrumentation are described and practical results are presented for two IGBT power modules.

   Novel over current protection methods for IGBT gate drivers using gate voltage monitoring
By Y. Nakayama; T. Ohi [View]
[Download]

Abstract: New gate drivers for high voltage IGBTs with over current protection methods using a gate voltage monitoring have been developed. These methods can detect over currents from the characteristic behavior of gate voltages under over current conditions and make it possible to protect IGBTs without using the current sensors or high voltage detection circuits used in conventional methods. These gate drivers have three detection circuits and a turn-off speed controller to protect the IGBTs from all kinds of over current conditions. The first detection circuit detects the over current in a short circuit during the turn-on transient. The second one detects the over current in a short circuit during the on-state. The third one detects the over current during the turn-off transient. When one of these detection circuits detects an over current, the turn-off speed is slowed down to protect the IGBT from the high surge voltage. These protection methods were experimentally tested and their validity was confirmed.

   Active clamping of IGBT: capacitor replaces transil diodes
By P. Lefranc; D. Bergogne; D. Planson; B. Allard; H. Morel; J.-F. Roche [View]
[Download]

Abstract: Active clamping is one major security function of an IGBT driver. Transil diodes are commonly used. This paper details the investigation of an original solution without such diodes. A charged capacitor in series with a fast diode is used. Clamping voltage is continuously adjustable. Experimental results are presented.

   Internal temperature and free-carrier concentration measurements in PT-IGBTs by internal laser deflection
By X. Perpiñà; X. Jordà; N. Mestres; M. Vellvehí; D. Flores; S. Hidalgo; P. Godignon [View]
[Download]

Abstract: Semiconductor devices characterization has an important role in microelectronics. In particular, thermal characterization is a primordial aspect to determine the device behaviour dependence with temperature, as well as its reliability. In this paper we describe an equipment to determine internal temperature and carrier concentration gradients in power semiconductor devices, using the internal IR-laser deflection technique (IIR-LD). IIR-LD technique is based on the measurement of deflection and absorption suffered by an IRlaser probe beam going through the biased power device. The interaction between the laser beam and the semiconductor can be interpreted in terms of temperature and free carrier concentration gradients. The first internal temperature gradient and free-carrier concentration measurements in the N–-epitaxy of a 600 V PT-IGBT device under single short power pulses (100µs) are shown. The obtained experimental behaviour is compared with simulation results for the same operation conditions.

   Influence of parasitic inductances on the switching behaviour of PowerMOSFETs used in automotive applications
By A. Castellazzi; R. Kraus; N. Seliger; D. Schmitt-Landsiedel [View]
[Download]

Abstract: New automotive applications require high-frequency switching of high currents. This results in considerable voltage-drops on the device and circuit parasitic inductance. Basing on the example of a synchronous-rectified buck-converter, this paper presents a simulative and experimental analysis of such effects and their influence on the nominal circuit behaviour. The results show in particular that increased turn-on and turn-off times with larger power dissipation are to be observed and that unintended turn-on of the synchronous-rectifier is possible.

   Snubberless operation of series connected 6.5 kV IGBTs for high-power and high-voltage applications
By U. Schwarzer; R. W. De Doncker; R. Sommer; G. Zaiser [View]
[Download]

Abstract: Novel 6.5 kV IGBT and diode modules are introduced recently in the market. The use of MOS-gated devices with higher off-state voltage levels leads to opportunities to reduce space and costs of converter systems for high-power and high-voltage applications. In this study, novel IGBTs are connected in series to operate at high output voltage levels. In this paper, a gate driver circuit with active gate control, designed for IGBT series connection and snubberless operation, is presented and its functionality is examined.

   Performance analysis of the SJ-MOSFET focused to energy loss estimation
By M. Cotorogea; A. Claudio;J. Macedonio [View]
[Download]

Abstract: Recently, a new type of power MOSFET, called Super Junction MOSFET, has been introduced. This new power device presents an interesting behavior in terms of a RDS(on) reduction for the same silicon area allowing to fabricate high voltage devices. Additionally, a reduction in the parasitic capacitances, improving the commutation characteristics, have been observed. Thus, this new power MOSFET could replace the traditional device in different power converter applications like power supplies (SMPS) or power factor correction applications. In order to select the appropiate power switch in a special application based on achieving maximum conversion efficiency, designers have to evaluate energy losses caused by all power semiconductor devices. Data sheet information , however, is not sufficient and often not precise enough to obtain realistic loss values. The objective of this paper is to explore the performance of the Super-Junction MOSFET (SJ-MOSFET) with respect to energy losses in power converter applications and to compare it with the performance of the conventional power MOSFET. It presents a method for total energy loss estimation in power converters considering three different current modes based on device characterization under different operating conditions.

   System level benefits of SiC power devices in DC-DC Converters
By B. Ozpineci; L. M. Tolbert; S. Kamrul Islam [View]
[Download]

Abstract: The superior properties of Silicon Carbide (SiC) power devices compared to Silicon (Si) power devices are expected to have a significant impact on the next-generation power electronics systems. Some of these benefits include a large reduction in the size, weight, and cost of the power conditioning and/or thermal systems and passive components. In this paper, Si and SiC diode models will be derived and used in a dc-dc converter suitable for automotive applications, and the aforementioned benefits will be demonstrated.

   Investigations on switching characteristics of an IGBT
By J. Pi³acinski; J. Deskur; S. Azzopardi [View]
[Download]

Abstract: In this paper, the studies on the dynamic properties of the Punch-Through IGBT under inductive load switching without any freewheeling diode reverse recovery influence are reported. The changes in the transistor collector-emitter resistance reflecting the dynamics of both the switch-on and switch-off transient processes under various electro-thermal conditions have been analyzed. The resistance has been found referring to the current and voltage runs registered across the device terminals. The investigations have been carried out for a wide range of the load current, supply voltage, gate resistance and device temperature values.

   Current source rectifiers with reverse blocking IGBTs and IGBTs with series diodes
By F. Kieferndorf; M. Förster; G. Venkataramanan; T.A. Lipo [View]
[Download]

Abstract: Current stiff converters (CSCs) have a well known requirement for reverse blocking type switching devices. This paper will discuss measurements of performance characteristics for a monolithic reverse blocking IGBT and an IGBT with a series diode. Measurement results and important characteristics will be presented and compared. Curve fit loss models will be applied to analyze the losses of each type of device in a current stiff rectifier (CSR) application. PCB designs for the two CSR realizations will be discussed in terms of the effect of the choice of device type on the size and parasitic inductances of the overall circuit. The characteristics of the devices in the CSRs will be compared to show how the PCB layout and devices interact. Finally a recommendation will be made as to which device is preferred for this application.

   A novel high frequency silicon carbide, SIT-based test-bed for the acquisition of SiC power device reverse recovery characteristics
By K.M. Speer; T.R. McNutt; A.B. Lostetter; H.A. Mantooth; K.J. Olejniczak [View]
[Download]

Abstract: A test system is presented that utilizes a high-frequency Silicon Carbide (SiC) Static Induction Transistor (SIT) in place of the traditional MOSFET to test reverse recovery characteristics for the new class of SiC power diodes. An easily implementable drive circuit is presented that can drive the highfrequency SIT. The SiC SIT is also compared to a commonly used Si MOSFET in the test circuit application.

   Study of a new driving strategy to ensure EMC compliance of MBS based dimmer
By R. Ferragut; J.C. Le Bunetel; D. Magnon; L. Gonthier [View]
[Download]

Abstract: EMC compliance of TRIAC based dimmers is ensured through a bulky mains filter, while it is usually performed through waveform shaping in insulated gate device based dimmers. This last method allows to reduce the size of the system and, therefore, to implement wall-box dimmers. In such a system switching waveforms achieving low EMI and acceptable power losses is of major concern. The commonly used driving strategy (R-C network drive) could ensure a good ratio between emitted interferences and switching losses. However experiments presented here show its over sensitivity to changes in power device parameters. The study of the optimum gate voltages and currents shows the gate current driving strategy as the more stable under power device parameter changes.

EPE 2003 - Topic 01e: Device Characterization and Applications
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2003 - Conference > EPE 2003 - Topic 01: DEVICES > EPE 2003 - Topic 01e: Device Characterization and Applications
	[return to parent folder]

	Magnetic field distribution in embedded passive integrated circuits By S. Schuh; M. Albach	[View] [Download]
Abstract: The integration of passive components in printed circuit boards by using structured layers of different material leads to completely new technical challenges, both in technological realisations and in simulations or modelling of the embedded components. In this paper the influence of FPC foils (Ferrite Polymer Compounds) on the magnetic field distribution and thus on the inductive coupling mechanisms between several loops is analytically calculated and verified by measurements.

	An application technique of a novel IGBT with reverse blocking capability for a direct linked type converter By A. Odaka; H. Fujimoto; J-i. Itoh; M. Takei; S. Igarashi; N. Eguchi; K. Ueno	[View] [Download]
Abstract: Aiming at the application to the AC-AC direct-linked-type converters, the authors developed a novel IGBT with reverse blocking capability (RB-IGBT) and a novel commutation method that does not cause the commutation failure. This paper describes the characteristics of the RB-IGBT, experimental results of commutation, and efficiency measurement result in the case of applying the RB-IGBT to an AC-AC buck converter.

	Challenges in using the latest generation of IGBTs in traction converters By M. M. Bakran; H-G. Eckel; M. Helsper; A. Nagel	[View] [Download]
Abstract: The latest generation of IGBTs feature characteristics like field-stop design or trench design. For the high-power high-voltage application as used in traction, the user is confronted with a new switching behavior. It will be shown how the IGBT and diode turn-off characteristics change and how sensitive it is to parasitic circuit characteristics.

	First inverter using silicon carbide power switches only By C. Rebbereh; H. Schierling; M. Braun	[View] [Download]
Abstract: In inverter technology the junction temperature of the power switches is a determining parameter for the design. In this paper an inverter concept using normally-on silicon carbide vertical junction field effect transistors (SiC VJFET) is presented, using only six power semiconductor elements and being able to run at notably higher temperatures and opening the chance to build more compact devices.

	The soft-switching tester and application By I. Feno; P. Spanik; I. Lokseninec	[View] [Download]
Abstract: An effort to experimentally evaluate the classical and new soft-switching techniques led to a new “tester” development and construction. The purpose of this equipment is to evaluate individual loss components that are inherent to a semiconductor device brand and individual soft-switching techniques used. A construction design and individual schematic diagrams of the tester are presented. Application examples of the tester and experimental results are shown as well.

	Current capability and power density of supercapacitors: conditions on energy efficiency By P. Barrade; A. Rufer	[View] [Download]
Abstract: Supercapacitors are components for energy storage. Due to their series resistors, the energy efficiency of supercapacitors can be low. In this paper, the unloading of supercapacitors with constant current and power are studied, to identify and take into account the energy efficiency and the power density of supercapacitors.

	Mapping of silicon carbide electrical properties by optical techniques By J.M. Bluet; I. El Harrouni; M. Mermoux; F. Baillet; G. Guillot	[View] [Download]
Abstract: The potential of silicon carbide for power devices realization is well known. Nevertheless, despite great progress in material growth, the industrial applications are still limited by the structural defects density and the inhomogeneous distribution of electrical properties. The required progress in material growth necessitates rapid, non destructive and accurate characterizations tools. Toward this end we developed scanning photoluminescence and Raman spectroscopy. The complementarity of the two techniques gives information on defects nature and on their impact on devices performance without using chemical etching and also enables the mapping of electrical properties without contact formation. The optical signatures of micropipes, screw dislocation and triangular defects are presented. The gettering effect of deep traps by micropipes and screw dislocation is evidenced. Finally, the methods to obtain minority carrier lifetime, free electron concentration and mobility mappings at the wafer scale are presented.

	Comparison of IGBT and MOSFET performances in motor drives with emphasis on the reverse current conduction through the devices By G. Belverde; C. Cavallaro; C. Guastella; M. Melito; S. Musumeci; A. Raciti	[View] [Download]
Abstract: The paper deals with a comparative investigation, in a typical motor control application, of the performances of IGBTs and a novel high-voltage family of power MOSFETs, belonging to the super junction group devices, with intrinsic fast-recovery diodes. This new power MOSFETs show very interesting characteristics in terms of both die size reduction and switching performances. The conduction loss reductions along with the improved body-diode characteristics allow these devices to be competitors of the IGBTs in the field of low-power motor drive applications. In particular, in the paper the comparison is performed between the performance of the MOSFET, with its body-diode, in respect of the “chip-to-chip” solution, which has been considered for the IGBT and diode. Finally, the main results of the experimental investigation in a case study, which has been realized to drive an AC motor, are reported. The specific application has been considered looking for a better understanding of the device area of applications in terms of switching frequency and load current.

	Dynamic voltage sharing of series connected IGBTs using passive snubbers and active clamping By H. Jacobs; J. Petzoldt; T. Reimann; R. Krümmer	[View] [Download]
Abstract: This paper presents an investigation of series connected IGBTs and diodes using passive snubbers controlling dv/dt, combined with active clamping of voltages across each switch. A comparison of switching losses depending on parameters, clamping voltage, gate drive delay times and capacitor size of the snubber is done by experimental measurements.

	Adaption of IGBT switching behaviour by means of active gate control for low and medium power By M. Helsper; F. W. Fuchs	[View] [Download]
Abstract: Active gate drive control methods for 1200V-IGBTs of low and medium power have been investigated. The control methods di/dt control, two step gate resisitor and du/dt-control have been investigated separately. For turn-on the di/dt control gives promising results. For turn-off one single method can’t fulfil the needs for an optimal behaviour alone. However a combination of two step gate resistor control and di/dt control is favourable here. The selected methods enable full adaptation to the application and give significant lower turn-off delay time, losses and overvoltage.

	Characterisation of power devices for extreme low temperature operation By S. Yang; A. J. Forsyth	[View] [Download]
Abstract: The design, construction and performance are described of a cryogenic test chamber for power semiconductor devices. The test system has the capability of exercising devices dynamically at up to 600 V and 100 A at closely controlled temperatures, which may range from room temperature down to 20 K. The electrical layout and instrumentation are described and practical results are presented for two IGBT power modules.

	Novel over current protection methods for IGBT gate drivers using gate voltage monitoring By Y. Nakayama; T. Ohi	[View] [Download]
Abstract: New gate drivers for high voltage IGBTs with over current protection methods using a gate voltage monitoring have been developed. These methods can detect over currents from the characteristic behavior of gate voltages under over current conditions and make it possible to protect IGBTs without using the current sensors or high voltage detection circuits used in conventional methods. These gate drivers have three detection circuits and a turn-off speed controller to protect the IGBTs from all kinds of over current conditions. The first detection circuit detects the over current in a short circuit during the turn-on transient. The second one detects the over current in a short circuit during the on-state. The third one detects the over current during the turn-off transient. When one of these detection circuits detects an over current, the turn-off speed is slowed down to protect the IGBT from the high surge voltage. These protection methods were experimentally tested and their validity was confirmed.

	Active clamping of IGBT: capacitor replaces transil diodes By P. Lefranc; D. Bergogne; D. Planson; B. Allard; H. Morel; J.-F. Roche	[View] [Download]
Abstract: Active clamping is one major security function of an IGBT driver. Transil diodes are commonly used. This paper details the investigation of an original solution without such diodes. A charged capacitor in series with a fast diode is used. Clamping voltage is continuously adjustable. Experimental results are presented.

	Internal temperature and free-carrier concentration measurements in PT-IGBTs by internal laser deflection By X. Perpiñà; X. Jordà; N. Mestres; M. Vellvehí; D. Flores; S. Hidalgo; P. Godignon	[View] [Download]
Abstract: Semiconductor devices characterization has an important role in microelectronics. In particular, thermal characterization is a primordial aspect to determine the device behaviour dependence with temperature, as well as its reliability. In this paper we describe an equipment to determine internal temperature and carrier concentration gradients in power semiconductor devices, using the internal IR-laser deflection technique (IIR-LD). IIR-LD technique is based on the measurement of deflection and absorption suffered by an IRlaser probe beam going through the biased power device. The interaction between the laser beam and the semiconductor can be interpreted in terms of temperature and free carrier concentration gradients. The first internal temperature gradient and free-carrier concentration measurements in the N–-epitaxy of a 600 V PT-IGBT device under single short power pulses (100µs) are shown. The obtained experimental behaviour is compared with simulation results for the same operation conditions.

	Influence of parasitic inductances on the switching behaviour of PowerMOSFETs used in automotive applications By A. Castellazzi; R. Kraus; N. Seliger; D. Schmitt-Landsiedel	[View] [Download]
Abstract: New automotive applications require high-frequency switching of high currents. This results in considerable voltage-drops on the device and circuit parasitic inductance. Basing on the example of a synchronous-rectified buck-converter, this paper presents a simulative and experimental analysis of such effects and their influence on the nominal circuit behaviour. The results show in particular that increased turn-on and turn-off times with larger power dissipation are to be observed and that unintended turn-on of the synchronous-rectifier is possible.

	Snubberless operation of series connected 6.5 kV IGBTs for high-power and high-voltage applications By U. Schwarzer; R. W. De Doncker; R. Sommer; G. Zaiser	[View] [Download]
Abstract: Novel 6.5 kV IGBT and diode modules are introduced recently in the market. The use of MOS-gated devices with higher off-state voltage levels leads to opportunities to reduce space and costs of converter systems for high-power and high-voltage applications. In this study, novel IGBTs are connected in series to operate at high output voltage levels. In this paper, a gate driver circuit with active gate control, designed for IGBT series connection and snubberless operation, is presented and its functionality is examined.

	Performance analysis of the SJ-MOSFET focused to energy loss estimation By M. Cotorogea; A. Claudio;J. Macedonio	[View] [Download]
Abstract: Recently, a new type of power MOSFET, called Super Junction MOSFET, has been introduced. This new power device presents an interesting behavior in terms of a RDS(on) reduction for the same silicon area allowing to fabricate high voltage devices. Additionally, a reduction in the parasitic capacitances, improving the commutation characteristics, have been observed. Thus, this new power MOSFET could replace the traditional device in different power converter applications like power supplies (SMPS) or power factor correction applications. In order to select the appropiate power switch in a special application based on achieving maximum conversion efficiency, designers have to evaluate energy losses caused by all power semiconductor devices. Data sheet information , however, is not sufficient and often not precise enough to obtain realistic loss values. The objective of this paper is to explore the performance of the Super-Junction MOSFET (SJ-MOSFET) with respect to energy losses in power converter applications and to compare it with the performance of the conventional power MOSFET. It presents a method for total energy loss estimation in power converters considering three different current modes based on device characterization under different operating conditions.

	System level benefits of SiC power devices in DC-DC Converters By B. Ozpineci; L. M. Tolbert; S. Kamrul Islam	[View] [Download]
Abstract: The superior properties of Silicon Carbide (SiC) power devices compared to Silicon (Si) power devices are expected to have a significant impact on the next-generation power electronics systems. Some of these benefits include a large reduction in the size, weight, and cost of the power conditioning and/or thermal systems and passive components. In this paper, Si and SiC diode models will be derived and used in a dc-dc converter suitable for automotive applications, and the aforementioned benefits will be demonstrated.

	Investigations on switching characteristics of an IGBT By J. Pi³acinski; J. Deskur; S. Azzopardi	[View] [Download]
Abstract: In this paper, the studies on the dynamic properties of the Punch-Through IGBT under inductive load switching without any freewheeling diode reverse recovery influence are reported. The changes in the transistor collector-emitter resistance reflecting the dynamics of both the switch-on and switch-off transient processes under various electro-thermal conditions have been analyzed. The resistance has been found referring to the current and voltage runs registered across the device terminals. The investigations have been carried out for a wide range of the load current, supply voltage, gate resistance and device temperature values.

	Current source rectifiers with reverse blocking IGBTs and IGBTs with series diodes By F. Kieferndorf; M. Förster; G. Venkataramanan; T.A. Lipo	[View] [Download]
Abstract: Current stiff converters (CSCs) have a well known requirement for reverse blocking type switching devices. This paper will discuss measurements of performance characteristics for a monolithic reverse blocking IGBT and an IGBT with a series diode. Measurement results and important characteristics will be presented and compared. Curve fit loss models will be applied to analyze the losses of each type of device in a current stiff rectifier (CSR) application. PCB designs for the two CSR realizations will be discussed in terms of the effect of the choice of device type on the size and parasitic inductances of the overall circuit. The characteristics of the devices in the CSRs will be compared to show how the PCB layout and devices interact. Finally a recommendation will be made as to which device is preferred for this application.

	A novel high frequency silicon carbide, SIT-based test-bed for the acquisition of SiC power device reverse recovery characteristics By K.M. Speer; T.R. McNutt; A.B. Lostetter; H.A. Mantooth; K.J. Olejniczak	[View] [Download]
Abstract: A test system is presented that utilizes a high-frequency Silicon Carbide (SiC) Static Induction Transistor (SIT) in place of the traditional MOSFET to test reverse recovery characteristics for the new class of SiC power diodes. An easily implementable drive circuit is presented that can drive the highfrequency SIT. The SiC SIT is also compared to a commonly used Si MOSFET in the test circuit application.

	Study of a new driving strategy to ensure EMC compliance of MBS based dimmer By R. Ferragut; J.C. Le Bunetel; D. Magnon; L. Gonthier	[View] [Download]
Abstract: EMC compliance of TRIAC based dimmers is ensured through a bulky mains filter, while it is usually performed through waveform shaping in insulated gate device based dimmers. This last method allows to reduce the size of the system and, therefore, to implement wall-box dimmers. In such a system switching waveforms achieving low EMI and acceptable power losses is of major concern. The commonly used driving strategy (R-C network drive) could ensure a good ratio between emitted interferences and switching losses. However experiments presented here show its over sensitivity to changes in power device parameters. The study of the optimum gate voltages and currents shows the gate current driving strategy as the more stable under power device parameter changes.