| Abstract |
The paper deals with a comparative investigation, in a typical motor control application, of the
performances of IGBTs and a novel high-voltage family of power MOSFETs, belonging to the super
junction group devices, with intrinsic fast-recovery diodes. This new power MOSFETs show very
interesting characteristics in terms of both die size reduction and switching performances. The
conduction loss reductions along with the improved body-diode characteristics allow these devices to
be competitors of the IGBTs in the field of low-power motor drive applications. In particular, in the
paper the comparison is performed between the performance of the MOSFET, with its body-diode, in
respect of the “chip-to-chip” solution, which has been considered for the IGBT and diode. Finally, the
main results of the experimental investigation in a case study, which has been realized to drive an AC
motor, are reported. The specific application has been considered looking for a better understanding
of the device area of applications in terms of switching frequency and load current. |
