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First inverter using silicon carbide power switches only
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| Author(s) |
C. Rebbereh; H. Schierling; M. Braun |
| Abstract |
In inverter technology the junction temperature of the power switches is a determining parameter for
the design. In this paper an inverter concept using normally-on silicon carbide vertical junction field
effect transistors (SiC VJFET) is presented, using only six power semiconductor elements and being
able to run at notably higher temperatures and opening the chance to build more compact devices. |
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| Filename: | EPE2003-PP0206 - Rebbereh |
| Filesize: | 222.5 KB |
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| Type |
Members Only |
| Date |
Last modified 2003-10-15 by Unknown |
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