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Novel over current protection methods for IGBT gate drivers using gate voltage monitoring
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| Author(s) |
Y. Nakayama; T. Ohi |
| Abstract |
New gate drivers for high voltage IGBTs with over current protection methods using a gate voltage monitoring have been developed. These methods can detect over currents from the characteristic behavior of gate voltages under over current conditions and make it possible to protect IGBTs without using the current sensors or high voltage detection circuits used in conventional methods. These gate drivers have three detection circuits and a turn-off speed controller to protect the IGBTs from all kinds of over current conditions. The first detection circuit detects the over current in a short circuit during the turn-on transient. The second one detects the over current in a short circuit during the on-state. The third one detects the over current during the turn-off transient. When one of these detection circuits detects an over current, the turn-off speed is slowed down to protect the IGBT from the high surge voltage. These protection methods were experimentally tested and their validity was confirmed. |
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| Filename: | EPE2003-PP0600 - Nakayama |
| Filesize: | 1016 KB |
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| Type |
Members Only |
| Date |
Last modified 2004-01-22 by Unknown |
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