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Characterisation of power devices for extreme low temperature operation
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| Author(s) |
S. Yang; A. J. Forsyth |
| Abstract |
The design, construction and performance are described of a cryogenic test chamber for power semiconductor devices. The test system has the capability of exercising devices dynamically at up to 600 V and 100 A at closely controlled temperatures, which may range from room temperature down to 20 K. The electrical layout and instrumentation are described and practical results are presented for two IGBT power modules. |
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| Filename: | EPE2003-PP0590 - Yang |
| Filesize: | 184.6 KB |
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| Type |
Members Only |
| Date |
Last modified 2003-10-16 by Unknown |
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