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Snubberless operation of series connected 6.5 kV IGBTs for high-power and high-voltage applications
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| Author(s) |
U. Schwarzer; R. W. De Doncker; R. Sommer; G. Zaiser |
| Abstract |
Novel 6.5 kV IGBT and diode modules are introduced recently in the market. The
use of MOS-gated devices with higher off-state voltage levels leads to opportunities to reduce
space and costs of converter systems for high-power and high-voltage applications. In this study,
novel IGBTs are connected in series to operate at high output voltage levels. In this paper, a gate
driver circuit with active gate control, designed for IGBT series connection and snubberless
operation, is presented and its functionality is examined. |
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| Filename: | EPE2003-PP0848 - Schwarzer |
| Filesize: | 676.3 KB |
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| Type |
Members Only |
| Date |
Last modified 2003-10-21 by Unknown |
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