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A novel high frequency silicon carbide, SIT-based test-bed for the acquisition of SiC power device reverse recovery characteristics
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| Author(s) |
K.M. Speer; T.R. McNutt; A.B. Lostetter; H.A. Mantooth; K.J. Olejniczak |
| Abstract |
A test system is presented that utilizes a high-frequency Silicon Carbide (SiC) Static Induction
Transistor (SIT) in place of the traditional MOSFET to test reverse recovery characteristics for the new
class of SiC power diodes. An easily implementable drive circuit is presented that can drive the highfrequency
SIT. The SiC SIT is also compared to a commonly used Si MOSFET in the test circuit application. |
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| Filename: | EPE2003-PP1092 - Speer |
| Filesize: | 218.1 KB |
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| Type |
Members Only |
| Date |
Last modified 2003-10-21 by Unknown |
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