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Investigations on switching characteristics of an IGBT
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| Author(s) |
J. Pi³acinski; J. Deskur; S. Azzopardi |
| Abstract |
In this paper, the studies on the dynamic properties of the Punch-Through IGBT under inductive load
switching without any freewheeling diode reverse recovery influence are reported. The changes in the
transistor collector-emitter resistance reflecting the dynamics of both the switch-on and switch-off
transient processes under various electro-thermal conditions have been analyzed. The resistance has
been found referring to the current and voltage runs registered across the device terminals. The
investigations have been carried out for a wide range of the load current, supply voltage, gate
resistance and device temperature values. |
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| Filename: | EPE2003-PP1040 - Pilacinski |
| Filesize: | 454.4 KB |
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| Type |
Members Only |
| Date |
Last modified 2003-10-21 by Unknown |
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