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System level benefits of SiC power devices in DC-DC Converters
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| Author(s) |
B. Ozpineci; L. M. Tolbert; S. Kamrul Islam |
| Abstract |
The superior properties of Silicon Carbide (SiC) power devices compared to Silicon (Si) power
devices are expected to have a significant impact on the next-generation power electronics systems.
Some of these benefits include a large reduction in the size, weight, and cost of the power
conditioning and/or thermal systems and passive components. In this paper, Si and SiC diode models
will be derived and used in a dc-dc converter suitable for automotive applications, and the
aforementioned benefits will be demonstrated. |
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| Filename: | EPE2003-PP1010 - Ozpineci |
| Filesize: | 377.8 KB |
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| Type |
Members Only |
| Date |
Last modified 2003-10-21 by Unknown |
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