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Internal temperature and free-carrier concentration measurements in PT-IGBTs by internal laser deflection
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| Author(s) |
X. Perpiñà; X. Jordà; N. Mestres; M. Vellvehí; D. Flores; S. Hidalgo; P. Godignon |
| Abstract |
Semiconductor devices characterization has an important role in microelectronics. In particular, thermal
characterization is a primordial aspect to determine the device behaviour dependence with temperature, as
well as its reliability. In this paper we describe an equipment to determine internal temperature and carrier
concentration gradients in power semiconductor devices, using the internal IR-laser deflection technique
(IIR-LD). IIR-LD technique is based on the measurement of deflection and absorption suffered by an IRlaser
probe beam going through the biased power device. The interaction between the laser beam and the
semiconductor can be interpreted in terms of temperature and free carrier concentration gradients. The
first internal temperature gradient and free-carrier concentration measurements in the N–-epitaxy of a 600
V PT-IGBT device under single short power pulses (100µs) are shown. The obtained experimental
behaviour is compared with simulation results for the same operation conditions. |
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| Filename: | EPE2003-PP0822 - Perpina |
| Filesize: | 583.6 KB |
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| Type |
Members Only |
| Date |
Last modified 2003-10-21 by Unknown |
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