| Abstract |
Recently, a new type of power MOSFET, called Super Junction MOSFET, has been introduced. This new
power device presents an interesting behavior in terms of a RDS(on) reduction for the same silicon area
allowing to fabricate high voltage devices. Additionally, a reduction in the parasitic capacitances,
improving the commutation characteristics, have been observed. Thus, this new power MOSFET could
replace the traditional device in different power converter applications like power supplies (SMPS) or
power factor correction applications. In order to select the appropiate power switch in a special
application based on achieving maximum conversion efficiency, designers have to evaluate energy losses
caused by all power semiconductor devices. Data sheet information , however, is not sufficient and often
not precise enough to obtain realistic loss values. The objective of this paper is to explore the
performance of the Super-Junction MOSFET (SJ-MOSFET) with respect to energy losses in power
converter applications and to compare it with the performance of the conventional power MOSFET. It
presents a method for total energy loss estimation in power converters considering three different current
modes based on device characterization under different operating conditions. |
