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Adaption of IGBT switching behaviour by means of active gate control for low and medium power
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| Author(s) |
M. Helsper; F. W. Fuchs |
| Abstract |
Active gate drive control methods for 1200V-IGBTs of low and medium power have been
investigated. The control methods di/dt control, two step gate resisitor and du/dt-control have been
investigated separately. For turn-on the di/dt control gives promising results. For turn-off one single
method can’t fulfil the needs for an optimal behaviour alone. However a combination of two step gate
resistor control and di/dt control is favourable here. The selected methods enable full adaptation to the
application and give significant lower turn-off delay time, losses and overvoltage. |
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| Filename: | EPE2003-PP0588 - Helsper |
| Filesize: | 434.9 KB |
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| Type |
Members Only |
| Date |
Last modified 2003-10-16 by Unknown |
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