| Abstract |
The potential of silicon carbide for power devices realization is well known. Nevertheless, despite great
progress in material growth, the industrial applications are still limited by the structural defects density and
the inhomogeneous distribution of electrical properties. The required progress in material growth necessitates
rapid, non destructive and accurate characterizations tools. Toward this end we developed scanning
photoluminescence and Raman spectroscopy. The complementarity of the two techniques gives information
on defects nature and on their impact on devices performance without using chemical etching and also
enables the mapping of electrical properties without contact formation. The optical signatures of micropipes,
screw dislocation and triangular defects are presented. The gettering effect of deep traps by micropipes and
screw dislocation is evidenced. Finally, the methods to obtain minority carrier lifetime, free electron
concentration and mobility mappings at the wafer scale are presented. |
