EPE Association: EPE 1999 - Topic 01: DEVICES

EPE 1999 - Topic 01: DEVICES
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 1999 - Conference > EPE 1999 - Topic 01: DEVICES

   [return to parent folder]

   EPE 1999 - Topic 01a: Passive Components

In this category, the user will find the papers which were presented during the EPE 1999 Conference, related to "Passive Components"

   EPE 1999 - Topic 01b: High Power Discrete Devices

In this category, the user will find the papers which were presented during the EPE 1999 Conference, related to "High Power Discrete Devices"

   EPE 1999 - Topic 01c: Hybrid Power Integration

In this category, the user will find the papers which were presented during the EPE 1999 Conference, related to "Hybrid Power Integration"

   EPE 1999 - Topic 01d: Monolitic Power Integration

In this category, the user will find the papers which were presented during the EPE 1999 Conference, related to "Monolithic Power Integration"

   EPE 1999 - Topic 01e: Device Characterisation and Applications

In this category, the user will find the papers which were presented during the EPE 1999 Conference, related to "Device Characterisation and Applications"

   EPE 1999 - Topic 01f: Thermal Design

In this category, the user will find the papers which were presented during the EPE 1999 Conference, related to "Thermal Design"

   EPE 1999 - Topic 01g: New Devices

In this category, the user will find the papers which were presented during the EPE 1999 Conference, related to "New Devices"

   EPE 1999 - Topic 01h: Simulation and Modelling of Power Devices

In this category, the user will find the papers which were presented during the EPE 1999 Conference, related to "Simulation and Modelling of Power Devices"

   A 1200V Merged PIN Schottky Diode with Soft Recovery and Positive
By N. Kaminski; N. Galster; S. Linder; C. Ng; R. Francis [View]
[Download]

Abstract: Originally, the introduction of pn-junctions below the metal semiconductor interface of a Schottky diode was intended as a screening against high electric field strengths [1]. But the so called merged PIN Schottky (MPS) diode also provides a better trade-off between on-state voltage drop and turn-off losses as a consequence of lower junction voltage and reduced anode emitter efficiency [2, 3]. In 1992 International Rectifier Corp. introduced the first commercially available diode based on this concept [3]. The superior properties of those devices have been improved further by means of axial lifetime engineering [4-7]. The final result is an IGBT companion diode with low forward voltage drop, a positive temperature coefficient, soft reverse recovery, and high ruggedness. This paper shows the results of the new 1200V/75A device (active area: 48.6mm2).

   A New 1200V PT IGBT Module Using Trench Gate Structure and Local Life Time Control
By H. Iwamoto; M. Tabata; H. Takahashi; N. Wheeler; E. Thal [View]
[Download]

Abstract: A new 1200V IGBT which utilises a trench gate structure and local lifetime control is presented. This device achieves 20-30% lower losses than planar IGBTs at 50% higher current density. The potentially high short circuit current associated with trench gate IGBTs is countered by integrating a real time current control (RTC) circuit into the IGBT module. Application of local lifetime control in the freewheel diode structure results in a soft reverse recovery characteristic. The design of the module package itself is optimised to give low stray inductance and low parasitic capacitance. These features result in reduced losses and lower RFI filter costs in power conversion applications.

   A Novel Method for the Prediction of Remagnetization Losses in Ferro- and ferrimagnetic material
By A. Brockmeyer; J. Reinert; R. W. De Doncker [View]
[Download]

Abstract: Inductors, transformers and electrical machines used in power electronic applications are usually exposed to non-sinusoidal voltages and currents. Therefore, the ferro- or ferrimagnetic material of these components is subjected to non-sinusoidal changes of flux. This paper discusses the influence of non-sinusoidal flux-waveforms on the remagnetization losses of magnetic materials. The physiscal origin of the power losses and different approaches for their calculation that have been presented in the past are reviewed. A detailed examination of a dynamic hysteresis model shows that the average remagnetization velocity is the physical origin of dynamic losses in magnetic material rather than the remagnetization frequency. this knowledge leads to an extension of the most common calculation rule for magnetic core losses, the Steinmetz-equation: The remagnetization frequency is replaced by an equivalent frequency that is calculated from the average remagnetization velocity. This gives the opportunity to calculate the losses in the time domain for arbitrary waveforms of flux. the whole set of parameters of the Steinmetz equation that is already known can be used. Extensive measurements verify the modified Steinmetz equation presented in this paper.

   A Punch-Through IGBT Model Using a Simple Technological Parameters Extraction Method for Two-Dimensional Physical Simulation
By S. Azzopardi; M. Trivedi; C. Zardini; K. Shenai [View]
[Download]

Abstract: The two-dimensional (2-D) physically-based simulation of power devices gives lots of information about the dynamic mechanisms which allow to understand the behavior of the devices. But it requires a lot of technological parameters such as doping, dimension, carrier lifetime of the various layers. Various destructive analysis methods are available, but they do not allow to keep the device intact. In this paper, we propose a physical model for Punch-Through IGBT obtained by using a non destructive parameters extraction method based on simple electrical measurements. Then, most of the technological parameters can be evaluated. To verify the accuracy of these extracted parameters, a 2- D IGBT structure is implemented in a 2-D physically-based simulator using the finite element method. The good matching between simulated and experimental results allows to validate this parameters extraction method.

   Calculation of the Temperature Development in Electronic Systems
By Y.C. Gerstenmaier; G. Wachutka [View]
[Download]

Abstract: In this paper a new formula for the time development of the temperatures of chosen locations in an electronic system (e.g. the hot spot temperatures of the semiconductor devices usually called junction temperatures) is presented and an exact physical foundation of thermal equivalent circuits is given. The formula is derived from the general heat conduction equation and allows the calculation of the thermal evolution for general power pulses P(t). The essential input value, which characterises the system thermally, is the transient thermal impedance ZthJA(t) junction-ambient, which is used as input. The method is generalised for systems with alternating heating of the semiconductors, i.e. multichip-modules in power converter applications. The results are exemplified by the calculation of the long term time evolution of the hot spot temperature in an IGBT module under arbitrary load current. The nonlinear temperature dependence of the heat generation source leads to a nonlinear integral equation, which is solved by a new and efficient algorithm with high stability and precision.

   CoolMOS - A New Approach Towards an Idealized Power Switch
By L. Lorenz [View]
[Download]

Abstract: CoolMOS technology - developed for the production of charge-compensated devices - is presented. Due to its novel internal structure, the device offers a dramatic reduction in on-state resistance with a completely altered voltage dependance of the device capacitances. Ruggedness aspects such as avalanche and short-circuit behavior are excellent and reach the limits of active zener-clamped devices. The above mentioned electrical characteristics make the device suitable for a broad range of applications. The paper also discusses device physics-based selection criteria for fast IGBTs and CoolMOS. The paper describes innovative SPICE and SABER simulation models incorporating a dynamic connection between electrical and thermal component description. On the one hand this enables the realistic simulation of operating states in which a relevant self-heating effect occurs. On the other, the models provide defined thermal nodes which create a connection to the thermal environment of the component and thus, for example, facilitate the investigation and optimization of heatsink options.

   Critical Assessment of High Voltage Power Devices for MV PWM VSI Converters
By Y. Shakweh [View]
[Download]

Abstract: Recent advancement in power semiconductors has been remarkable, and the number of power devices described in the literature is staggering and bewildering to both power device specialists and power electronics equipment designers. This paper identifies the main high voltage power switches suitable for a multi-megawatt, Pulse Width Modulated (PWM), Voltage Source Inverter (VSI). A comparison between the High Voltage (HV) Insulated Gate Bipolar Transistor (IGBT) and the Integrated Gate Commutated Thyristor (IGCT) is made. The application of both types of devices in MV inverter stack designs is briefly discussed and commented upon. The benefits offered by the soft-switching over hard-switching alternatives are highlighted. The paper concludes that a soft-switched HV IGBT stack design has significantly better performance over hard-driven devices, including the IGCT.

   Freewheeling Diode Failure Modes in IGBT Applications
By M.T. Rahimo; N. Y. A. Shammas [View]
[Download]

Abstract: In this paper, reverse recovery failure modes in modern fast power diodes are investigated. By the aid of semiconductor device simulation tools, a better view is obtained for the physical process, and operating conditions at which both diode snappy recovery and dynamic avalanching occur during the recovery period in modern high frequency power electronic applications. The work presented here confirms that the reverse recovery process can be expressed by means of diode capacitive effects which influence the reverse recovery characteristics. The paper also shows that the control of the carrier gradient and the remaining stored charge in gthe drift region during the recovery phase influence both failure modes and determine if the diode exhibits a soft, snappy or dynamic avalanche recovery characteristics.

   Functional Integration for New Power Switches Design: Example of the "Thyristor Dual" Function
By J.-L. Sanchez; M. Breil; J.-P. Laur; P. Austin; J. Jalade; F. Rossel; H. Foch [View]
[Download]

Abstract: This paper highlights the potentialities offered by the functional integration concept for integration of the � thyristor dual � function currently achieved by discrete power devices (transistors and diodes) association with specific control circuits using an auxiliary supply. Following an overview of the different switching power functions, it is shown how to use the structure and technology of the basic power device can be used to integrate the additional cells and achieve the electrical functions desired without auxiliary supply.

   High Power (4.5kV, 4kA Turn-off) IEGT
By H. Matsuda; J. Miwa; S. Yanagisawa; S. Tsuchihasi; M. Takeda; Y. Tsunoda; S. Iesaka [View]
[Download]

Abstract: We have developed a 4.5kV IEGT (Injection Enhanced Gate Transistor). Low saturation voltage and though turn off switching capability, such as 4kA, could be achieved. Taking the place of the GTO, this device would promise higher performance in various power equipment such as high power M-watts systems, high voltage motor drive, etc...

   High Reliability High Voltage Fast Switches
By D. Chatroux; Y. Lausenaz; J.-F. Villard; L. Garnier; D. Lafore [View]
[Download]

Abstract: In France, one joint program between Commissariat � l'Energie Atomique (C.E.A.) for the research part and COGEMA for the industrial application is the development of the Uranium Vapor Laser Isotopic Seperation (SILVA). The Power Electronic Laboratory of the C.E.A. in Pierrelatte is in charge of development on power supplies for Copper Vapor Lasers. For this specific application, the association of thousands of small standard components on printed circuit board is a cost-effective and reliable solution. We will explain why this solution is a cost-effctive and high-performance one for this application. Moreover, we will see that, in our particular case, the serial connection of a large number of components provides a very high reliability without over-cost.

   IGCTs in Soft Switching Power Converters
By S. Bernet; M. L�scher; P. K. Steimer [View]
[Download]

Abstract: This paper investigates the behavior of Integrated Gate Commutated Thyristors (IGCTs) at soft switching. Initially soft switching Voltage Source Inverters are presented which are promising candidates for high power industrial or traction applications (S >= 500 kVA). A test circuit is derived, which enables an experimental investigation of 51 mm (4500V; 650A) reverse conducting IGCTs as Zero Voltage Switch, Zero Current Switch and at hard switching. The occuring IGCT and diode switching transients are analysed and measured switching losses are discussed. Additionally the impact of soft switching on the gate drive is considered. The results achieved enable a first evaluation of the potential IGCTs at soft switching.

   Influence of Stray Inductances on Current Sharing During Switching Transitions in Paralleled Semiconductors
By P. O. Jeannin; M. Akhbari; J. L. Schanen [View]
[Download]

Abstract: To ensure reliable and trouble-free parallel operation, the parameters which affect the transient behaviour of the semiconductors must be analysed. In this paper, the influence of the stray inductances on the waveforms during commutation is studied. For this purpose, the PEEC method is employed for inductance calculation. Conditions allowing an equilibrium current sharing and equal over-voltages on the paralleled devices are obtained. Based on developed conditions, a structure involving two paralleled power MOSFET modules is proposed. Simulation and experimental results are given to validate the proposed approach.

   Multiple HE Ion Implantation for lifetime control in PiN rectifier
By E. Napoli; A. G.M.Strollo; P. Spirito [View]
[Download]

Abstract: In the paper optimal design of power PiN diodes using a recently proposed He implantation technique that produces voids in the silicon, is presented. Main advantages of the technique are the strict control on depth and on lateral definition of voids in the device, the stability of voids during silicon processing steps, and, as a consequence, a great control on lifetime killing realized at various depth in the device. The use of multiple He ion implantation steps to optimize diode performance is analyzed. Mixed mode numerical simulations are used to evaluate dynamic and static performance and to compare He ion implantation technique with electron irradiation. Lifetime control effected near the anode junction (needed to improve diode speed with little increase of on-state voltage drop) and lifetime killing near cathode junction (needed to reduce current tail and turn-off losses) are investigated.

   Reliability Improvement of the Soldering Thermal Fatigue with AISiC technology on traction high power IGBT modules
By G. Coquery; R. Lallemand; D. Wagner; M. Piton; H. Berg; K. Sommer [View]
[Download]

Abstract: Since 1994, the technology of the high power IGBT modules for traction inverter was improved a lot. The first technology weakness identified was the bonding attach reliability. The second failure mode is the cracking of the solder layer between base plate material and ceramic plate. The topic proposed concerns the power cycling behavior of the packaging technology using new base plate material named AISiC, to replace the usual copper base plate. The results of this accelerated tests show a high improvement, the lifetime before critical solder layer delamination is increased by a factor of six to ten, according to our test results. Test conditions, methodology of measurement mainly considering thermal resistance interpretation, thermal simulation and failures analysis are discussed.

   Selective Harmonic Tracking Algorithm for Harmonic Power Evaluation in a Field Oriented Control Drive with Flux Reduction
By J. M. Moreno-Eguilaz; J. Peracaula [View]
[Download]

Abstract: With increasing harmonic pollution in the power system, real-time monitoring and analysis of harmonic variation have become important. In this paper, a fully digital algorithm to measure and evaluate harmonic power using a selective harmonic tracking method is presented and applied to an efficient variable-speed vector-controlled 1.5 kW induction motor drive.

   Simulation and Experimental Results of Irradiated Power Diodes
By R. Siemieniec; D. Schipanski; W.S�dkamp; J.Lutz [View]
[Download]

Abstract: An advanced recombination model based on the Shockley-Read-Hall-statistics with full trap dynamics is used for the simulation of irradiated power diodes. The model makes use of the rate equations which also take into account the dynamic effects in the space charge region of the power devices. The high-level lifetime calculated from DLTS (Deep Level Transient Spectroscopy) data does not agree well with the lifetime determined by lifetime measurements. An agreement is achieved by means of a temperature dependent capture coefficient of the dominating recombination center E(90K), calculated from the lifetime measurement results. Simulations and measurements are done to determine the dependencies of reverse recovery current maximum and reverse recovery charge on temperature. By use of the calculated capture coefficient, a sufficient agreement between simulation and measurement is achieved.

   Switching Properties of the CoolMOS Transistor
By T. Undeland; F. Kleveland; P. Andreassen; T. Rogne [View]
[Download]

Abstract: This paper presents switching behavior measurements of the CoolMOS. The measurements are made on a singleplus inverter with an inductive load. The main focus of this work is the turn-off process, which differs from the ordinary MOSFET behavior. From an application engineer point of view, the main difference compared to an ordinary MOSFET is the altered drain-source capacitance values. Especially the ten-fold increase of drain-source capacitance at low voltages has a strong impact on the device turn-off characteristic, the CoolMOS has not the traditional gate controlled turn-off. In fact, the turn-off is device controlled rather than gate controlled as it is in normal MOSFETs. The main issues covered is the turn-off time delay from channel turn-off till voltage rise and the voltage transient itself. In addition to this, measurements on the parasitic free wheeling diode is presented.

EPE 1999 - Topic 01: DEVICES
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 1999 - Conference > EPE 1999 - Topic 01: DEVICES
	[return to parent folder]

	EPE 1999 - Topic 01a: Passive Components
In this category, the user will find the papers which were presented during the EPE 1999 Conference, related to "Passive Components"
	EPE 1999 - Topic 01b: High Power Discrete Devices
In this category, the user will find the papers which were presented during the EPE 1999 Conference, related to "High Power Discrete Devices"
	EPE 1999 - Topic 01c: Hybrid Power Integration
In this category, the user will find the papers which were presented during the EPE 1999 Conference, related to "Hybrid Power Integration"
	EPE 1999 - Topic 01d: Monolitic Power Integration
In this category, the user will find the papers which were presented during the EPE 1999 Conference, related to "Monolithic Power Integration"
	EPE 1999 - Topic 01e: Device Characterisation and Applications
In this category, the user will find the papers which were presented during the EPE 1999 Conference, related to "Device Characterisation and Applications"
	EPE 1999 - Topic 01f: Thermal Design
In this category, the user will find the papers which were presented during the EPE 1999 Conference, related to "Thermal Design"
	EPE 1999 - Topic 01g: New Devices
In this category, the user will find the papers which were presented during the EPE 1999 Conference, related to "New Devices"
	EPE 1999 - Topic 01h: Simulation and Modelling of Power Devices
In this category, the user will find the papers which were presented during the EPE 1999 Conference, related to "Simulation and Modelling of Power Devices"

	A 1200V Merged PIN Schottky Diode with Soft Recovery and Positive By N. Kaminski; N. Galster; S. Linder; C. Ng; R. Francis	[View] [Download]
Abstract: Originally, the introduction of pn-junctions below the metal semiconductor interface of a Schottky diode was intended as a screening against high electric field strengths [1]. But the so called merged PIN Schottky (MPS) diode also provides a better trade-off between on-state voltage drop and turn-off losses as a consequence of lower junction voltage and reduced anode emitter efficiency [2, 3]. In 1992 International Rectifier Corp. introduced the first commercially available diode based on this concept [3]. The superior properties of those devices have been improved further by means of axial lifetime engineering [4-7]. The final result is an IGBT companion diode with low forward voltage drop, a positive temperature coefficient, soft reverse recovery, and high ruggedness. This paper shows the results of the new 1200V/75A device (active area: 48.6mm2).

	A New 1200V PT IGBT Module Using Trench Gate Structure and Local Life Time Control By H. Iwamoto; M. Tabata; H. Takahashi; N. Wheeler; E. Thal	[View] [Download]
Abstract: A new 1200V IGBT which utilises a trench gate structure and local lifetime control is presented. This device achieves 20-30% lower losses than planar IGBTs at 50% higher current density. The potentially high short circuit current associated with trench gate IGBTs is countered by integrating a real time current control (RTC) circuit into the IGBT module. Application of local lifetime control in the freewheel diode structure results in a soft reverse recovery characteristic. The design of the module package itself is optimised to give low stray inductance and low parasitic capacitance. These features result in reduced losses and lower RFI filter costs in power conversion applications.

	A Novel Method for the Prediction of Remagnetization Losses in Ferro- and ferrimagnetic material By A. Brockmeyer; J. Reinert; R. W. De Doncker	[View] [Download]
Abstract: Inductors, transformers and electrical machines used in power electronic applications are usually exposed to non-sinusoidal voltages and currents. Therefore, the ferro- or ferrimagnetic material of these components is subjected to non-sinusoidal changes of flux. This paper discusses the influence of non-sinusoidal flux-waveforms on the remagnetization losses of magnetic materials. The physiscal origin of the power losses and different approaches for their calculation that have been presented in the past are reviewed. A detailed examination of a dynamic hysteresis model shows that the average remagnetization velocity is the physical origin of dynamic losses in magnetic material rather than the remagnetization frequency. this knowledge leads to an extension of the most common calculation rule for magnetic core losses, the Steinmetz-equation: The remagnetization frequency is replaced by an equivalent frequency that is calculated from the average remagnetization velocity. This gives the opportunity to calculate the losses in the time domain for arbitrary waveforms of flux. the whole set of parameters of the Steinmetz equation that is already known can be used. Extensive measurements verify the modified Steinmetz equation presented in this paper.

	A Punch-Through IGBT Model Using a Simple Technological Parameters Extraction Method for Two-Dimensional Physical Simulation By S. Azzopardi; M. Trivedi; C. Zardini; K. Shenai	[View] [Download]
Abstract: The two-dimensional (2-D) physically-based simulation of power devices gives lots of information about the dynamic mechanisms which allow to understand the behavior of the devices. But it requires a lot of technological parameters such as doping, dimension, carrier lifetime of the various layers. Various destructive analysis methods are available, but they do not allow to keep the device intact. In this paper, we propose a physical model for Punch-Through IGBT obtained by using a non destructive parameters extraction method based on simple electrical measurements. Then, most of the technological parameters can be evaluated. To verify the accuracy of these extracted parameters, a 2- D IGBT structure is implemented in a 2-D physically-based simulator using the finite element method. The good matching between simulated and experimental results allows to validate this parameters extraction method.

	Calculation of the Temperature Development in Electronic Systems By Y.C. Gerstenmaier; G. Wachutka	[View] [Download]
Abstract: In this paper a new formula for the time development of the temperatures of chosen locations in an electronic system (e.g. the hot spot temperatures of the semiconductor devices usually called junction temperatures) is presented and an exact physical foundation of thermal equivalent circuits is given. The formula is derived from the general heat conduction equation and allows the calculation of the thermal evolution for general power pulses P(t). The essential input value, which characterises the system thermally, is the transient thermal impedance ZthJA(t) junction-ambient, which is used as input. The method is generalised for systems with alternating heating of the semiconductors, i.e. multichip-modules in power converter applications. The results are exemplified by the calculation of the long term time evolution of the hot spot temperature in an IGBT module under arbitrary load current. The nonlinear temperature dependence of the heat generation source leads to a nonlinear integral equation, which is solved by a new and efficient algorithm with high stability and precision.

	CoolMOS - A New Approach Towards an Idealized Power Switch By L. Lorenz	[View] [Download]
Abstract: CoolMOS technology - developed for the production of charge-compensated devices - is presented. Due to its novel internal structure, the device offers a dramatic reduction in on-state resistance with a completely altered voltage dependance of the device capacitances. Ruggedness aspects such as avalanche and short-circuit behavior are excellent and reach the limits of active zener-clamped devices. The above mentioned electrical characteristics make the device suitable for a broad range of applications. The paper also discusses device physics-based selection criteria for fast IGBTs and CoolMOS. The paper describes innovative SPICE and SABER simulation models incorporating a dynamic connection between electrical and thermal component description. On the one hand this enables the realistic simulation of operating states in which a relevant self-heating effect occurs. On the other, the models provide defined thermal nodes which create a connection to the thermal environment of the component and thus, for example, facilitate the investigation and optimization of heatsink options.

	Critical Assessment of High Voltage Power Devices for MV PWM VSI Converters By Y. Shakweh	[View] [Download]
Abstract: Recent advancement in power semiconductors has been remarkable, and the number of power devices described in the literature is staggering and bewildering to both power device specialists and power electronics equipment designers. This paper identifies the main high voltage power switches suitable for a multi-megawatt, Pulse Width Modulated (PWM), Voltage Source Inverter (VSI). A comparison between the High Voltage (HV) Insulated Gate Bipolar Transistor (IGBT) and the Integrated Gate Commutated Thyristor (IGCT) is made. The application of both types of devices in MV inverter stack designs is briefly discussed and commented upon. The benefits offered by the soft-switching over hard-switching alternatives are highlighted. The paper concludes that a soft-switched HV IGBT stack design has significantly better performance over hard-driven devices, including the IGCT.

	Freewheeling Diode Failure Modes in IGBT Applications By M.T. Rahimo; N. Y. A. Shammas	[View] [Download]
Abstract: In this paper, reverse recovery failure modes in modern fast power diodes are investigated. By the aid of semiconductor device simulation tools, a better view is obtained for the physical process, and operating conditions at which both diode snappy recovery and dynamic avalanching occur during the recovery period in modern high frequency power electronic applications. The work presented here confirms that the reverse recovery process can be expressed by means of diode capacitive effects which influence the reverse recovery characteristics. The paper also shows that the control of the carrier gradient and the remaining stored charge in gthe drift region during the recovery phase influence both failure modes and determine if the diode exhibits a soft, snappy or dynamic avalanche recovery characteristics.

	Functional Integration for New Power Switches Design: Example of the "Thyristor Dual" Function By J.-L. Sanchez; M. Breil; J.-P. Laur; P. Austin; J. Jalade; F. Rossel; H. Foch	[View] [Download]
Abstract: This paper highlights the potentialities offered by the functional integration concept for integration of the � thyristor dual � function currently achieved by discrete power devices (transistors and diodes) association with specific control circuits using an auxiliary supply. Following an overview of the different switching power functions, it is shown how to use the structure and technology of the basic power device can be used to integrate the additional cells and achieve the electrical functions desired without auxiliary supply.

	High Power (4.5kV, 4kA Turn-off) IEGT By H. Matsuda; J. Miwa; S. Yanagisawa; S. Tsuchihasi; M. Takeda; Y. Tsunoda; S. Iesaka	[View] [Download]
Abstract: We have developed a 4.5kV IEGT (Injection Enhanced Gate Transistor). Low saturation voltage and though turn off switching capability, such as 4kA, could be achieved. Taking the place of the GTO, this device would promise higher performance in various power equipment such as high power M-watts systems, high voltage motor drive, etc...

	High Reliability High Voltage Fast Switches By D. Chatroux; Y. Lausenaz; J.-F. Villard; L. Garnier; D. Lafore	[View] [Download]
Abstract: In France, one joint program between Commissariat � l'Energie Atomique (C.E.A.) for the research part and COGEMA for the industrial application is the development of the Uranium Vapor Laser Isotopic Seperation (SILVA). The Power Electronic Laboratory of the C.E.A. in Pierrelatte is in charge of development on power supplies for Copper Vapor Lasers. For this specific application, the association of thousands of small standard components on printed circuit board is a cost-effective and reliable solution. We will explain why this solution is a cost-effctive and high-performance one for this application. Moreover, we will see that, in our particular case, the serial connection of a large number of components provides a very high reliability without over-cost.

	IGCTs in Soft Switching Power Converters By S. Bernet; M. L�scher; P. K. Steimer	[View] [Download]
Abstract: This paper investigates the behavior of Integrated Gate Commutated Thyristors (IGCTs) at soft switching. Initially soft switching Voltage Source Inverters are presented which are promising candidates for high power industrial or traction applications (S >= 500 kVA). A test circuit is derived, which enables an experimental investigation of 51 mm (4500V; 650A) reverse conducting IGCTs as Zero Voltage Switch, Zero Current Switch and at hard switching. The occuring IGCT and diode switching transients are analysed and measured switching losses are discussed. Additionally the impact of soft switching on the gate drive is considered. The results achieved enable a first evaluation of the potential IGCTs at soft switching.

	Influence of Stray Inductances on Current Sharing During Switching Transitions in Paralleled Semiconductors By P. O. Jeannin; M. Akhbari; J. L. Schanen	[View] [Download]
Abstract: To ensure reliable and trouble-free parallel operation, the parameters which affect the transient behaviour of the semiconductors must be analysed. In this paper, the influence of the stray inductances on the waveforms during commutation is studied. For this purpose, the PEEC method is employed for inductance calculation. Conditions allowing an equilibrium current sharing and equal over-voltages on the paralleled devices are obtained. Based on developed conditions, a structure involving two paralleled power MOSFET modules is proposed. Simulation and experimental results are given to validate the proposed approach.

	Multiple HE Ion Implantation for lifetime control in PiN rectifier By E. Napoli; A. G.M.Strollo; P. Spirito	[View] [Download]
Abstract: In the paper optimal design of power PiN diodes using a recently proposed He implantation technique that produces voids in the silicon, is presented. Main advantages of the technique are the strict control on depth and on lateral definition of voids in the device, the stability of voids during silicon processing steps, and, as a consequence, a great control on lifetime killing realized at various depth in the device. The use of multiple He ion implantation steps to optimize diode performance is analyzed. Mixed mode numerical simulations are used to evaluate dynamic and static performance and to compare He ion implantation technique with electron irradiation. Lifetime control effected near the anode junction (needed to improve diode speed with little increase of on-state voltage drop) and lifetime killing near cathode junction (needed to reduce current tail and turn-off losses) are investigated.

	Reliability Improvement of the Soldering Thermal Fatigue with AISiC technology on traction high power IGBT modules By G. Coquery; R. Lallemand; D. Wagner; M. Piton; H. Berg; K. Sommer	[View] [Download]
Abstract: Since 1994, the technology of the high power IGBT modules for traction inverter was improved a lot. The first technology weakness identified was the bonding attach reliability. The second failure mode is the cracking of the solder layer between base plate material and ceramic plate. The topic proposed concerns the power cycling behavior of the packaging technology using new base plate material named AISiC, to replace the usual copper base plate. The results of this accelerated tests show a high improvement, the lifetime before critical solder layer delamination is increased by a factor of six to ten, according to our test results. Test conditions, methodology of measurement mainly considering thermal resistance interpretation, thermal simulation and failures analysis are discussed.

	Selective Harmonic Tracking Algorithm for Harmonic Power Evaluation in a Field Oriented Control Drive with Flux Reduction By J. M. Moreno-Eguilaz; J. Peracaula	[View] [Download]
Abstract: With increasing harmonic pollution in the power system, real-time monitoring and analysis of harmonic variation have become important. In this paper, a fully digital algorithm to measure and evaluate harmonic power using a selective harmonic tracking method is presented and applied to an efficient variable-speed vector-controlled 1.5 kW induction motor drive.

	Simulation and Experimental Results of Irradiated Power Diodes By R. Siemieniec; D. Schipanski; W.S�dkamp; J.Lutz	[View] [Download]
Abstract: An advanced recombination model based on the Shockley-Read-Hall-statistics with full trap dynamics is used for the simulation of irradiated power diodes. The model makes use of the rate equations which also take into account the dynamic effects in the space charge region of the power devices. The high-level lifetime calculated from DLTS (Deep Level Transient Spectroscopy) data does not agree well with the lifetime determined by lifetime measurements. An agreement is achieved by means of a temperature dependent capture coefficient of the dominating recombination center E(90K), calculated from the lifetime measurement results. Simulations and measurements are done to determine the dependencies of reverse recovery current maximum and reverse recovery charge on temperature. By use of the calculated capture coefficient, a sufficient agreement between simulation and measurement is achieved.

	Switching Properties of the CoolMOS Transistor By T. Undeland; F. Kleveland; P. Andreassen; T. Rogne	[View] [Download]
Abstract: This paper presents switching behavior measurements of the CoolMOS. The measurements are made on a singleplus inverter with an inductive load. The main focus of this work is the turn-off process, which differs from the ordinary MOSFET behavior. From an application engineer point of view, the main difference compared to an ordinary MOSFET is the altered drain-source capacitance values. Especially the ten-fold increase of drain-source capacitance at low voltages has a strong impact on the device turn-off characteristic, the CoolMOS has not the traditional gate controlled turn-off. In fact, the turn-off is device controlled rather than gate controlled as it is in normal MOSFETs. The main issues covered is the turn-off time delay from channel turn-off till voltage rise and the voltage transient itself. In addition to this, measurements on the parasitic free wheeling diode is presented.