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High Power (4.5kV, 4kA Turn-off) IEGT
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| Author(s) |
H. Matsuda; J. Miwa; S. Yanagisawa; S. Tsuchihasi; M. Takeda; Y. Tsunoda; S. Iesaka |
| Abstract |
We have developed a 4.5kV IEGT (Injection Enhanced Gate Transistor). Low saturation voltage and though turn off switching capability, such as 4kA, could be achieved. Taking the place of the GTO, this device would promise higher performance in various power equipment such as high power M-watts systems, high voltage motor drive, etc... |
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| Filename: | EPE1999 - PP00818 - Matsuda.pdf |
| Filesize: | 1.181 MB |
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| Type |
Members Only |
| Date |
Last modified 2004-04-02 by System |
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