| |
A New 1200V PT IGBT Module Using Trench Gate Structure and Local Life Time Control
| [View]
[Download]
|
| Author(s) |
H. Iwamoto; M. Tabata; H. Takahashi; N. Wheeler; E. Thal |
| Abstract |
A new 1200V IGBT which utilises a trench gate structure and local lifetime control is presented. This device achieves 20-30% lower losses than planar IGBTs at 50% higher current density. The potentially high short circuit current associated with trench gate IGBTs is countered by integrating a real time current control (RTC) circuit into the IGBT module. Application of local lifetime control in the freewheel diode structure results in a soft reverse recovery characteristic. The design of the module package itself is optimised to give low stray inductance and low parasitic capacitance. These features result in reduced losses and lower RFI filter costs in power conversion applications. |
| Download |
| Filename: | EPE1999 - PP00854 - Wheeler.pdf |
| Filesize: | 147 KB |
|
| Type |
Members Only |
| Date |
Last modified 2004-04-01 by System |
| |
 |