EPE Association: EPE 1999 - Topic 01h: Simulation and Modelling of Power Devices

EPE 1999 - Topic 01h: Simulation and Modelling of Power Devices
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 1999 - Conference > EPE 1999 - Topic 01: DEVICES > EPE 1999 - Topic 01h: Simulation and Modelling of Power Devices

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   A Compact Model for Depletion MOSFETs in Smart Power Applications
By L. Goehler; K. Kelting [View]
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Abstract: This paper presents a compact depletion MOSFET (DMOSFET) model primary applicable in smart power circuit simulations. For the first time, a complete description of all internal states and the stored charge in both on - state and subthreshold operation of a DMOSFET is given. Despite these advantages the equation set requires 25 parameters only.

   Accurate Modeling of Commutation Cell for Loss Calculation and EMC Performance Prediction in Power Converters
By M. Akhbari; J. L. Schanen; P. Leturcq; M. O. Berraies [View]
[Download]

Abstract: Determination of switching losses and EMC (Electromagnetic Compatibility) performance of power converters requires such a degree of accuracy in modelling that can not be obtained by usual models existing in general purpose circuit simulators like PSpice. In this paper, a precise model for commutation cell is presented. For power PIN diode, a distributed model adapted in the form of state space model is presented. This model describes the dynamics of charges in the middle zone of power PIN diode. An accurate behavioural model for power MOSFET is elaborated and the parasitic elements (stray inductances) of structure are calculated by a PEEC (Partial Element Equivalent Circuit) method based software. Simulation and experimental results are compared. The results show the robustness of the model against the variation of operating conditions.

   Analysis of the BJT Activation during the Power MOS diode turn-off
By G. Vito Persiano; F. Iannuzzo; G. Busatto; P. Spirito [View]
[Download]

Abstract: The activation of the parasitic bipolar transistor inherent in a power MOSFET used as a fly-back diode is investigated. Numerical simulation is used to highlight the activation process and to analyse the effects of the geometrical and physical parameters of the MOSFET structure. It is shown that the additional electron injection due to the BJT activation results in higher recovery times and peak reverse currents, thus significantly affecting the MOSFET reliability. A comparison between numerical and experimental results points out that the BJT activation can be detected in most of times by the waveform shape of the drainsource voltage during the reverse recovery of the MOSFET. It is also shown that the occurrence of an activation of the parasitic BJT can be more reliably related to the charge removed from the epilayer at the turn-off. Among the physical and geometrical parameters of the device a key role in the activation mechanism is shown to be played by the body contact and the P+ body region resistances.

   Bidimensional Lifetime Control as Design Technnique for PiN rectifiers
By E. Napoli [View]
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Abstract: Numerical analysis of performance improvement available using lifetime control techniques able to control device carrier lifetime not only in the axial direction, but also in the longitudinal direction (2D lifetime control) is presented. Mixed mode numerical simulations are used to evaluate static and dynamic behavior of power PiN diodes using 2D lifetime control. The analysis shows that 2D lifetime control gives a better trade-off between static and dynamic behavior with respect to electron irradiation technique. Guidelines for optimal design are given. In the paper it is shown that 2D lifetime control is a very flexible design technique, since there are many lifetime profiles with similar effects on diode performance.

   Identification of the Technological Parameters of the Power Diode
By B. Allard; S. Ghedira; A. Ammous; H. Morel; D. Renault; R. Ehlinger [View]
[Download]

Abstract: This paper is not available

   Power Pin Diode Electro-Thermal Spice Macromodel with Forward and Reverse Recovery
By A. Maxim; G. Maxim; D. Andreu; J. Boucher [View]
[Download]

Abstract: A new physical based power PIN diode SPICE macromodel was developed by using the "in-line equation" non-linear controlled sources implemented in the new generation of SPICE simulators, to model the device internal electrical and thermal equations. The solutions of both the ambipolar diffusion equation and the heat flow equation were modelled in the Laplace domain by a direct implementation of their non-rational expressions. Thus a better simulation accuracy is achieved by considering the distributed character of both the electrical and thermal processes. This new SPICE macromodel precisely describes the forward and reverse recoveries, the conductivity modulation of the base resistance, the emitter recombination effects and the device self-heating process. The proposed behavioural SPICE macromodel is portable in all the modern SPICE like simulators that support the ABM facilities, and it contains only low level SPICE devices and thus leads to a high computational efficiency, with no convergence problems.

EPE 1999 - Topic 01h: Simulation and Modelling of Power Devices
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 1999 - Conference > EPE 1999 - Topic 01: DEVICES > EPE 1999 - Topic 01h: Simulation and Modelling of Power Devices
	[return to parent folder]

	A Compact Model for Depletion MOSFETs in Smart Power Applications By L. Goehler; K. Kelting	[View] [Download]
Abstract: This paper presents a compact depletion MOSFET (DMOSFET) model primary applicable in smart power circuit simulations. For the first time, a complete description of all internal states and the stored charge in both on - state and subthreshold operation of a DMOSFET is given. Despite these advantages the equation set requires 25 parameters only.

	Accurate Modeling of Commutation Cell for Loss Calculation and EMC Performance Prediction in Power Converters By M. Akhbari; J. L. Schanen; P. Leturcq; M. O. Berraies	[View] [Download]
Abstract: Determination of switching losses and EMC (Electromagnetic Compatibility) performance of power converters requires such a degree of accuracy in modelling that can not be obtained by usual models existing in general purpose circuit simulators like PSpice. In this paper, a precise model for commutation cell is presented. For power PIN diode, a distributed model adapted in the form of state space model is presented. This model describes the dynamics of charges in the middle zone of power PIN diode. An accurate behavioural model for power MOSFET is elaborated and the parasitic elements (stray inductances) of structure are calculated by a PEEC (Partial Element Equivalent Circuit) method based software. Simulation and experimental results are compared. The results show the robustness of the model against the variation of operating conditions.

	Analysis of the BJT Activation during the Power MOS diode turn-off By G. Vito Persiano; F. Iannuzzo; G. Busatto; P. Spirito	[View] [Download]
Abstract: The activation of the parasitic bipolar transistor inherent in a power MOSFET used as a fly-back diode is investigated. Numerical simulation is used to highlight the activation process and to analyse the effects of the geometrical and physical parameters of the MOSFET structure. It is shown that the additional electron injection due to the BJT activation results in higher recovery times and peak reverse currents, thus significantly affecting the MOSFET reliability. A comparison between numerical and experimental results points out that the BJT activation can be detected in most of times by the waveform shape of the drainsource voltage during the reverse recovery of the MOSFET. It is also shown that the occurrence of an activation of the parasitic BJT can be more reliably related to the charge removed from the epilayer at the turn-off. Among the physical and geometrical parameters of the device a key role in the activation mechanism is shown to be played by the body contact and the P+ body region resistances.

	Bidimensional Lifetime Control as Design Technnique for PiN rectifiers By E. Napoli	[View] [Download]
Abstract: Numerical analysis of performance improvement available using lifetime control techniques able to control device carrier lifetime not only in the axial direction, but also in the longitudinal direction (2D lifetime control) is presented. Mixed mode numerical simulations are used to evaluate static and dynamic behavior of power PiN diodes using 2D lifetime control. The analysis shows that 2D lifetime control gives a better trade-off between static and dynamic behavior with respect to electron irradiation technique. Guidelines for optimal design are given. In the paper it is shown that 2D lifetime control is a very flexible design technique, since there are many lifetime profiles with similar effects on diode performance.

	Identification of the Technological Parameters of the Power Diode By B. Allard; S. Ghedira; A. Ammous; H. Morel; D. Renault; R. Ehlinger	[View] [Download]
Abstract: This paper is not available

	Power Pin Diode Electro-Thermal Spice Macromodel with Forward and Reverse Recovery By A. Maxim; G. Maxim; D. Andreu; J. Boucher	[View] [Download]
Abstract: A new physical based power PIN diode SPICE macromodel was developed by using the "in-line equation" non-linear controlled sources implemented in the new generation of SPICE simulators, to model the device internal electrical and thermal equations. The solutions of both the ambipolar diffusion equation and the heat flow equation were modelled in the Laplace domain by a direct implementation of their non-rational expressions. Thus a better simulation accuracy is achieved by considering the distributed character of both the electrical and thermal processes. This new SPICE macromodel precisely describes the forward and reverse recoveries, the conductivity modulation of the base resistance, the emitter recombination effects and the device self-heating process. The proposed behavioural SPICE macromodel is portable in all the modern SPICE like simulators that support the ABM facilities, and it contains only low level SPICE devices and thus leads to a high computational efficiency, with no convergence problems.