EPE Association: EPE 1999 - Topic 01g: New Devices

EPE 1999 - Topic 01g: New Devices
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 1999 - Conference > EPE 1999 - Topic 01: DEVICES > EPE 1999 - Topic 01g: New Devices

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   Automatic Timing of Mode Transitions in the multiple State Thyristor
By B.H.Stark; P.R.Palmer [View]
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Abstract: Many multiple-mode devices have been proposed combining IGBT switching and thyristor on-state characteristics. However, the complication of precisely timing two gates is unattractive. This paper analyses a recent method of designing multiple-mode devices with a single gate and automatic timing of the mode transitions. Simulated timing results on an example structure are presented and discussed.

   Electrical Behaviour of a New Gallium Arsenide Power Schottky Diode
By A. Lindemann; St. Knigge [View]
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Abstract: This paper presents new galium arsenide power Schottky diodes with blocking voltages of some hundreds of volts. Chips have been developed, processed and packaged. Electrical measurements show exceptionally fast reverse recovery and low forward voltage combined with high temperature capability and low parameter variations. These results promise the new diodes will permit further progress in high frequency power converter technology.

   The MBS (Mos Bidirectional Switch) a New MOS Switch With Reverse ...
By M. Roy; L. Gonthier; C. Anceau [View]
[Download]

Abstract: A new voltage controlled switch with reverse blocking voltage call MBS (Mos Bidirectional Switch) is presented. The silicon structure of this device as well as the static and dynamic characterisations of MBS prototypes will be showed, and its compatibility with the integration of a logic controlled circuit too.

EPE 1999 - Topic 01g: New Devices
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 1999 - Conference > EPE 1999 - Topic 01: DEVICES > EPE 1999 - Topic 01g: New Devices
	[return to parent folder]

	Automatic Timing of Mode Transitions in the multiple State Thyristor By B.H.Stark; P.R.Palmer	[View] [Download]
Abstract: Many multiple-mode devices have been proposed combining IGBT switching and thyristor on-state characteristics. However, the complication of precisely timing two gates is unattractive. This paper analyses a recent method of designing multiple-mode devices with a single gate and automatic timing of the mode transitions. Simulated timing results on an example structure are presented and discussed.

	Electrical Behaviour of a New Gallium Arsenide Power Schottky Diode By A. Lindemann; St. Knigge	[View] [Download]
Abstract: This paper presents new galium arsenide power Schottky diodes with blocking voltages of some hundreds of volts. Chips have been developed, processed and packaged. Electrical measurements show exceptionally fast reverse recovery and low forward voltage combined with high temperature capability and low parameter variations. These results promise the new diodes will permit further progress in high frequency power converter technology.

	The MBS (Mos Bidirectional Switch) a New MOS Switch With Reverse ... By M. Roy; L. Gonthier; C. Anceau	[View] [Download]
Abstract: A new voltage controlled switch with reverse blocking voltage call MBS (Mos Bidirectional Switch) is presented. The silicon structure of this device as well as the static and dynamic characterisations of MBS prototypes will be showed, and its compatibility with the integration of a logic controlled circuit too.