EPE Association: EPE 1999 - Topic 01b: High Power Discrete Devices

EPE 1999 - Topic 01b: High Power Discrete Devices
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 1999 - Conference > EPE 1999 - Topic 01: DEVICES > EPE 1999 - Topic 01b: High Power Discrete Devices

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   A New IGBT Chip Design for 2.5kV Power Pack IGBT with High Withstand Capability
By S. Yasukazu; Koh-Yoshikawa; Takeharu-Koga; Takeshi-Fujii; Yoshikazu-Takahashi [View]
[Download]

Abstract: A new concept for achieving much higher electrical withstand capabilities on a high power IGBT is discussed in this paper. It should be noted that high turn-off capability of 6600A (@ peak collector voltage = 2500 V. Tj=125°C) and the short-circuit capability of over 50usec (@Vcc= 1600V, Tj=125°C) are successfuly obtained by newly designed Power Pack IGBT. In this paper, the simulation results based upon the new IGBT chip design concept are mentioned with comparison to our experimental data.

   Causes of Parasitic Current Oscillation in IGBT Modules During Turn-Off
By P. R. Palmer; J. C. Joyce [View]
[Download]

Abstract: Parallel IGBT chips in modules may exhibit undesirable characteristics at turnoff. Gate resistors, used to stabilise the operation of paralleled IGBT chips, decouple their operation. For good transient current sharing during turn-off, their operation needs to be well coupled. This paper is concerned with the optimal design of gate resistors for IGBT modules. Experimental results are for an ideally matched chip pair. Theoretical results show that a minimum value of gate resistance is needed for stability.

   Characterization of press-packed IGBT
By A.Camera; C. Crovetto; F. Fasce; M. Pasqualetti; M. Portesine; R. Scicolone; P.E. Zani; G.Botto; S. Tenconi [View]
[Download]

Abstract: We present the thermal analysis and the electrical characterization of a new high power high reliability press-packed IGBT designed by Ansaldo both for 1700V and 3300V. Moreover we report the feature of a 550kVA inverter leg we have built which is suitable both for traction and industrial applications.

   Comparison of Modified Punch-Through and Non-Punch Through IGBTs for Soft Switching Topologies
By V. Pickert [View]
[Download]

Abstract: IGBTs used in soft switching topologies need a different physical structure compared to IGBTs for hard switching. This paper compares modified IGBTs in terms of losses, stresses and switching speed. It also focuses on the differences of performance between Punch-Through (PT) and Non- Punch-Through (NPT) IGBTs. Results show that modified NPT IGBTs have advantages over PT devices at high and low switching frequencies.

   Design and Manufacturing of Application Specific High Power Converters
By H.E. Grüning; J.K. Steinke [View]
[Download]

Abstract: During the past decade, power electronic R&D focus has had to shift remarkably: from technology during the 80’s to total system cost in the 90’s. Simplicity of design, modularity and reduced partscount has thus had to become the main targets, and snubberless operation a major issue. Due to its transistor characteristics, the IGBT is a champion in this new design philosophy. Thyristor type devices like the GTO, MCT and SITh offered low on-state loss at high blocking voltage but, entering the field from low end of the voltage spectrum, the IGBT could beat all of them. Today, IGBTs are even operated at kV and kA levels. Nevertheless, high on-state loss at high blocking voltage and high packaging complexity tend to hinder the IGBT at high current. With large wafers and low losses, bipolar devices are much more feasible for such types of power. Spinning off from the GTO, the IGCT has demonstrated its ease of wafer production, well proven packaging, reliability and snubberless turn-off at the same time. This presentation summarises the IGCT’s development. Device characteristics but also topology, design aspects and system characteristics are brought into the focus. A high degree of modularity, design simplicity and parts-count reduction is observed. Building blocks are analysed and further potential investigated. Examples from various application areas are presented including Medium Voltage Drives, DVRs, UPSs and very high power series connection. IGCTs thus present themselves as the big brother of the IGBT, ready to serve the user in the high power domaine like the IGBT does at lower power.

   Design Concepts of a Bondless Pressure Contact IGBT
By M. Evans; F. J. Wakeman; R. I. Irons; G. W. Lockwood; K. R. Billett [View]
[Download]

Abstract: The mechanical construction and characteristics of a new 400A, 1800V bondless pressure contact IGBT are presented. Details of the design philosophy used in the bondless pressure contact device are reviewed, with special emphasis being given to the electrothermal characteristics, which are both modelled and compared to a substrate mounted design. Some consideration is given to optimising devices for specific applications.

   High Voltage Power Module with Extended Reliability
By U.Scheuermann; J.Lutz [View]
[Download]

Abstract: For high voltage modules, the demand on reliability is increased. For reasons of thermal conductivity and thermal mismatch, Al2O3 ceramics have to be replaced by AlN. But thermal mismatch between AlN and copper will reduce the reliability in state-of-the-art copper base plate systems. Therefore, either better adapted materials (i.e. AlSiC) have to be used for base plates or a pressure contact system without base plate must be designed. The analysis of the thermal mismatch and the thermal resistance of pressure systems and AlSiC systems show, that the pressure contact system can be expected to be the most reliable solution. A 3.3kV IGBT module in this technology contains 6 sub-units of 200A in parallel, each connected with low inductance to a common DC bus bar. The integrated driver unit supervises temperature and current. The CAL freewheeling diode has a high dynamical ruggedness. The system is capable of a high power cycling reliability.

   IPM: A Power Electronic Switch for Modular High Power Traction Converters
By G. Hilpert; J. Marquardt [View]
[Download]

Abstract: Adtranz has chosen IGBT technology for traction converters. Even in high power applications, the IGBT based Integrated Power Module (IPM) technology will succeed the GTO technology. This paper describes the IPM and its use in high power traction converters. Subjects like mechanical design, electrical and thermal characteristics and the gate-drive are discussed. Furthermore, a short overview of possible optimisation steps in this technology is given.

   New Diodes With Pressure Contact for Hard-Switched High Power Converters
By R. Barthelmeß; M. Beuermann; N. Winter [View]
[Download]

Abstract: New power semiconductor switches, like IGBT and GCT (gate commutated thyristor), offer excellent switching performance and make snubberless converter design possible. New fast diodes in standard ceramic press-pack housings have been developed for these new demands. 4500V diodes in 100mm standard press-pack housings show excellent switching behavior at high di/dt and a wide range of the junction temperature up to 140°C. Different diode designs are investigated by experiments. The press-pack concept guarantees redundancy in series connection, well known power cycling capability and high case rupture currents.

   Reliability Test of Power IGBT's for Railway Traction
By L. Fratelli; G. Giannini; B. Cascone; G. Busatto [View]
[Download]

Abstract: Traction applications is high reliability demanding for IGBT modules, as requirements are very severe and cyclic operation causes thermomechanical fatigue. The paper reports about Ansaldo Trasporti activity in reliability testing of high voltage IGBT stressed in typical condition of traction applications, developed within the frame of Brite Euram RAPSDRA project. Testing facility is described, as well as test results: solder delamination at the baseplate seems to be the first failure mechanism to be excited. Such result are used in order to perform “design to reliability” of traction power converters.

EPE 1999 - Topic 01b: High Power Discrete Devices
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 1999 - Conference > EPE 1999 - Topic 01: DEVICES > EPE 1999 - Topic 01b: High Power Discrete Devices
	[return to parent folder]

	A New IGBT Chip Design for 2.5kV Power Pack IGBT with High Withstand Capability By S. Yasukazu; Koh-Yoshikawa; Takeharu-Koga; Takeshi-Fujii; Yoshikazu-Takahashi	[View] [Download]
Abstract: A new concept for achieving much higher electrical withstand capabilities on a high power IGBT is discussed in this paper. It should be noted that high turn-off capability of 6600A (@ peak collector voltage = 2500 V. Tj=125°C) and the short-circuit capability of over 50usec (@Vcc= 1600V, Tj=125°C) are successfuly obtained by newly designed Power Pack IGBT. In this paper, the simulation results based upon the new IGBT chip design concept are mentioned with comparison to our experimental data.

	Causes of Parasitic Current Oscillation in IGBT Modules During Turn-Off By P. R. Palmer; J. C. Joyce	[View] [Download]
Abstract: Parallel IGBT chips in modules may exhibit undesirable characteristics at turnoff. Gate resistors, used to stabilise the operation of paralleled IGBT chips, decouple their operation. For good transient current sharing during turn-off, their operation needs to be well coupled. This paper is concerned with the optimal design of gate resistors for IGBT modules. Experimental results are for an ideally matched chip pair. Theoretical results show that a minimum value of gate resistance is needed for stability.

	Characterization of press-packed IGBT By A.Camera; C. Crovetto; F. Fasce; M. Pasqualetti; M. Portesine; R. Scicolone; P.E. Zani; G.Botto; S. Tenconi	[View] [Download]
Abstract: We present the thermal analysis and the electrical characterization of a new high power high reliability press-packed IGBT designed by Ansaldo both for 1700V and 3300V. Moreover we report the feature of a 550kVA inverter leg we have built which is suitable both for traction and industrial applications.

	Comparison of Modified Punch-Through and Non-Punch Through IGBTs for Soft Switching Topologies By V. Pickert	[View] [Download]
Abstract: IGBTs used in soft switching topologies need a different physical structure compared to IGBTs for hard switching. This paper compares modified IGBTs in terms of losses, stresses and switching speed. It also focuses on the differences of performance between Punch-Through (PT) and Non- Punch-Through (NPT) IGBTs. Results show that modified NPT IGBTs have advantages over PT devices at high and low switching frequencies.

	Design and Manufacturing of Application Specific High Power Converters By H.E. Grüning; J.K. Steinke	[View] [Download]
Abstract: During the past decade, power electronic R&D focus has had to shift remarkably: from technology during the 80’s to total system cost in the 90’s. Simplicity of design, modularity and reduced partscount has thus had to become the main targets, and snubberless operation a major issue. Due to its transistor characteristics, the IGBT is a champion in this new design philosophy. Thyristor type devices like the GTO, MCT and SITh offered low on-state loss at high blocking voltage but, entering the field from low end of the voltage spectrum, the IGBT could beat all of them. Today, IGBTs are even operated at kV and kA levels. Nevertheless, high on-state loss at high blocking voltage and high packaging complexity tend to hinder the IGBT at high current. With large wafers and low losses, bipolar devices are much more feasible for such types of power. Spinning off from the GTO, the IGCT has demonstrated its ease of wafer production, well proven packaging, reliability and snubberless turn-off at the same time. This presentation summarises the IGCT’s development. Device characteristics but also topology, design aspects and system characteristics are brought into the focus. A high degree of modularity, design simplicity and parts-count reduction is observed. Building blocks are analysed and further potential investigated. Examples from various application areas are presented including Medium Voltage Drives, DVRs, UPSs and very high power series connection. IGCTs thus present themselves as the big brother of the IGBT, ready to serve the user in the high power domaine like the IGBT does at lower power.

	Design Concepts of a Bondless Pressure Contact IGBT By M. Evans; F. J. Wakeman; R. I. Irons; G. W. Lockwood; K. R. Billett	[View] [Download]
Abstract: The mechanical construction and characteristics of a new 400A, 1800V bondless pressure contact IGBT are presented. Details of the design philosophy used in the bondless pressure contact device are reviewed, with special emphasis being given to the electrothermal characteristics, which are both modelled and compared to a substrate mounted design. Some consideration is given to optimising devices for specific applications.

	High Voltage Power Module with Extended Reliability By U.Scheuermann; J.Lutz	[View] [Download]
Abstract: For high voltage modules, the demand on reliability is increased. For reasons of thermal conductivity and thermal mismatch, Al2O3 ceramics have to be replaced by AlN. But thermal mismatch between AlN and copper will reduce the reliability in state-of-the-art copper base plate systems. Therefore, either better adapted materials (i.e. AlSiC) have to be used for base plates or a pressure contact system without base plate must be designed. The analysis of the thermal mismatch and the thermal resistance of pressure systems and AlSiC systems show, that the pressure contact system can be expected to be the most reliable solution. A 3.3kV IGBT module in this technology contains 6 sub-units of 200A in parallel, each connected with low inductance to a common DC bus bar. The integrated driver unit supervises temperature and current. The CAL freewheeling diode has a high dynamical ruggedness. The system is capable of a high power cycling reliability.

	IPM: A Power Electronic Switch for Modular High Power Traction Converters By G. Hilpert; J. Marquardt	[View] [Download]
Abstract: Adtranz has chosen IGBT technology for traction converters. Even in high power applications, the IGBT based Integrated Power Module (IPM) technology will succeed the GTO technology. This paper describes the IPM and its use in high power traction converters. Subjects like mechanical design, electrical and thermal characteristics and the gate-drive are discussed. Furthermore, a short overview of possible optimisation steps in this technology is given.

	New Diodes With Pressure Contact for Hard-Switched High Power Converters By R. Barthelmeß; M. Beuermann; N. Winter	[View] [Download]
Abstract: New power semiconductor switches, like IGBT and GCT (gate commutated thyristor), offer excellent switching performance and make snubberless converter design possible. New fast diodes in standard ceramic press-pack housings have been developed for these new demands. 4500V diodes in 100mm standard press-pack housings show excellent switching behavior at high di/dt and a wide range of the junction temperature up to 140°C. Different diode designs are investigated by experiments. The press-pack concept guarantees redundancy in series connection, well known power cycling capability and high case rupture currents.

	Reliability Test of Power IGBT's for Railway Traction By L. Fratelli; G. Giannini; B. Cascone; G. Busatto	[View] [Download]
Abstract: Traction applications is high reliability demanding for IGBT modules, as requirements are very severe and cyclic operation causes thermomechanical fatigue. The paper reports about Ansaldo Trasporti activity in reliability testing of high voltage IGBT stressed in typical condition of traction applications, developed within the frame of Brite Euram RAPSDRA project. Testing facility is described, as well as test results: solder delamination at the baseplate seems to be the first failure mechanism to be excited. Such result are used in order to perform “design to reliability” of traction power converters.