| Abstract |
The two-dimensional (2-D) physically-based simulation of power devices gives lots of information
about the dynamic mechanisms which allow to understand the behavior of the devices. But it requires
a lot of technological parameters such as doping, dimension, carrier lifetime of the various layers.
Various destructive analysis methods are available, but they do not allow to keep the device intact.
In this paper, we propose a physical model for Punch-Through IGBT obtained by using a non
destructive parameters extraction method based on simple electrical measurements. Then, most of the
technological parameters can be evaluated. To verify the accuracy of these extracted parameters, a 2-
D IGBT structure is implemented in a 2-D physically-based simulator using the finite element
method. The good matching between simulated and experimental results allows to validate this
parameters extraction method. |
