| Abstract |
In the paper optimal design of power PiN diodes
using a recently proposed He implantation
technique that produces voids in the silicon, is
presented. Main advantages of the technique are
the strict control on depth and on lateral
definition of voids in the device, the stability of
voids during silicon processing steps, and, as a
consequence, a great control on lifetime killing
realized at various depth in the device.
The use of multiple He ion implantation steps to
optimize diode performance is analyzed.
Mixed mode numerical simulations are used to
evaluate dynamic and static performance and to
compare He ion implantation technique with
electron irradiation.
Lifetime control effected near the anode junction
(needed to improve diode speed with little
increase of on-state voltage drop) and lifetime
killing near cathode junction (needed to reduce
current tail and turn-off losses) are investigated. |
