EPE Association: EPE 1999 - Topic 01e: Device Characterisation and Applications

EPE 1999 - Topic 01e: Device Characterisation and Applications
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 1999 - Conference > EPE 1999 - Topic 01: DEVICES > EPE 1999 - Topic 01e: Device Characterisation and Applications

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   An Active Gate Drive with Three-Stage Control and Fast Protection for High Power IGBTs
By Vinod John; B-S. Suh; T. A. Lipo [View]
[Download]

Abstract: Active gate drive and fault protection technology can be used to obtain high performance switching and fault protection characteristics in IGBTs. This paper presents a three-stage active turn-on and turn-off gate driver integrated with a fast fault current limiting circuit. The proposed three-stage active gate drive technique is verified to be able to operate under the wide range of temperature conditions experienced by the devices. The integrated fast fault protection circuit allows the active gate drive to operate at a higher on-state gate voltage, which leads to reduction of the conduction loss. Also, due to the fault management strategy the active drive circuit can considerably improve the fault endurance capability of the device.

   Anomalous Overvoltage Oscillations in the Reverse Recovery of Power p-i-n Diodes: Experiments and Simulations
By P. Cova; R. Menozzi; M. Pasqualetti; M. Portesine; R. Scicolone; B. Zerbinati [View]
[Download]

Abstract: This work studies the anomalous oscillations (snap-off) sometimes observed during p-i-n diode switch-off, a serious reliability issue for snubberless operation. The turn-off behavior has been measured and simulated for different diode structures. A correlation is sought among the snap-off threshold, the recovery softness, and the diode technological-geometrical features.

   Behaviour of Fast and Ultra-Fast 600V Punch-Through IGBT under Unclamped Inductive Switching Stress
By S. Azzopardi; J.M. Vinassa; C. Zardini [View]
[Download]

Abstract: In this paper, we investigate the behavior of Fast and Ultra-Fast 600V Punch-Through IGBT under Unclamped Inductive Switching stress. These high stress conditions occur when the freewheeling diode fails. As a consequence, the device is submitted to high current and high voltage simultaneously. In order to investigate the behaviour of Fast and Ultra-Fast 600V Punch-Through IGBT, we propose to analyze the effect of the peak collector current and the temperature values. Under the chosen test conditions, the results show on one hand that the temperature influences the dynamic breakdown voltage value and also the collector-emitter voltage shape and on the other hand, that the Ultra-Fast 600V Punch-Through IGBT presents a higher ruggedness than the Fast 600V Punch-Through IGBT.

   Fast Isolated IGBT Driver with Desaturation Protection and Fault Feedback
By A. Van den Bossche; V. Valchev; L. Clotea; J. Melkebeek [View]
[Download]

Abstract: The greater current and voltage handling capability of the modern power IGBT's require smart, high voltage isolated gate drive circuits, specifically designed to drive and protect them. The essential requirements of IGBT gate drive circuits in various operation conditions including bridge configurations have been analysed. Derivation of an isolated power supply, methods for over-current protection and the characteristics of the drive output stage are discussed and reliable solutions proposed. The proposed IGBT gate drive circuit is realised by discrete devices and has a low loss floating supply, a desaturation protection realising short circuit protection and current limiting and galvanic isolated fault feedback signal.

   High-voltage Cascode Monolithic Switches in QRC Applications
By G. Belverde; A. Galluzzo; M. Melito; S. Musumeci; A. Raciti [View]
[Download]

Abstract: In this paper it is presented a new monolithic device suitable for high-voltage applications based on a bipolar-Power MOSFET cascode connection. The basic device features of this smart-power, emitter-switching component, are described both in terms of physical structure, and electrical performances. The device behaviour is tested in Zero-Voltage (ZV) applications as a benchmark to exp^lore the capability of this high-voltage high-frequency switch. The experimental tests are carried out in particular in a DC-DC boost quasi-resonant converter (QRC) in order to better understanding the improvements and constraints deriving in the actual use of the new component. Finally, the frequency limit of the tested device is compared with those of Power MOSFET and IGBT devices determined in the same application.

   IGBTs and Schottky diodes in high power high frequency applications
By F. Kleveland; T. Undeland; J.K. Langelid [View]
[Download]

Abstract: This paper presents transistor measurements made on an inverter with series resonant load, where the switching frequency varies slightly above the resonant frequency (inductive mode) and below the resonant frequency (capacitive mode). The conditions under capacitive mode is of special interest because the reverse current prior to turn off may reduce the IGBT’s stored charge and thereby reduce the switching losses. In this paper we investigate the effect this reverse current has on both the IGBT’s stored charge and switching losses. In the test circuit, the free wheeling diodes are realized through series connections of Schottky diodes.

   Long-term Evolution of Power IGBT Component - Experiment and Theory
By A. Bouzourene; G. Rojat; P-J. Viverge; G. Grellet [View]
[Download]

Abstract: This paper presents results about the ageing process in the IGBT power transistor. In using the HTGB (High Temperature Gate Bias) test, we observe that the threshold voltage (VT) increases as the component ages. Then with the aid of this experimental result and the published theories on trapped charge process we developed the first mathematical model of the evolution of this electric parameter (VT) depending on test conditions and ageing time (tstress). The ageing time dependence appears in a logarithm form such as VT (tstress) = VT (0) + A *Log10 (B*tstress) and give quite good agreement with experimental results. The coefficients depend on test conditions, we discuss this influence to try to improve the model.

   Performance Evaluation of Series Connected IGBT Devices
By G. Belverde; A. Galluzzo; M. Melito; S. Musumeci; A. Raciti [View]
[Download]

Abstract: A successful use of series connected strings of MOSFETs or IGBTs requires equalizing the dynamic and static voltage sharing across the devices. The dynamic voltage imbalance is generally managed via the slope control of the output voltages by capacitor networks, or by active balancing circuits on the gate side. The main issues that related to the performances of series connected strings of devices are faced. In particular, evaluations are performed among the assisted switching behaviours obtained with conventional load side circuits, and those obtained with a new circuit acting on the gate side. Experimental tests are carried out in order to evaluate the impact of the actual control actions on the devices, with reference to the power consumption, the commutation times, and the drive requirements. Commutations of a single switch are used as reference to compare the performances of multiple switch connections, in case of an equal voltage blocking capability of the single and the multiple switches. Advantages and disadvantages of the assisted transient switching are treated extensively, in order to acquire a deeper insight on the industrial feasibility of the proposed active voltage sharing circuit.

   Serial Connected Active Voltage Clamping
By Y. Lausenaz; D. Chatroux; J-F. Villard; J-M. Li; D. Lafore; L. Garnier [View]
[Download]

Abstract: The new post project for uranium enrichment SILVA needs specific power converters. The LETC laboratory of the C.E.A. in Pierrelatte has been studying these since 5 years. The aim of this laboratory consists in developing high voltage solid-state converters using a large number of small standard solid-state components (MOSFETs, IGBTs, thyristors and diodes) connected in series. In these associations, voltage balancement system are not used, but the voltage is limited on each stage in its safety area by clamping protection. This paper describes different voltage clamping systems, active clamping technique and their association in series

   Three-Level High-Power Inverters with IGCT and IGBT Elements Compared on the Basis of Measurements of the Device Losses
By E. U. Krafft; A. Steimel; J. K. Steinke [View]
[Download]

Abstract: Voltage source inverter systems equipped with IGBT and IGCT devices contend in the field of medium and high voltage and high-power applications. Measurements in a synthetic test circuit deliver parameters for the comparison of high-power medium-voltage three-level inverters employing these devices. The goal is a trade-off of output power and efficiency vs. switching frequency of the concepts snubberless IGBT, IGCT with di/dt-limitation and - aiming at series connection - IGCT with additional dv/dt-snubbers.

EPE 1999 - Topic 01e: Device Characterisation and Applications
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 1999 - Conference > EPE 1999 - Topic 01: DEVICES > EPE 1999 - Topic 01e: Device Characterisation and Applications
	[return to parent folder]

	An Active Gate Drive with Three-Stage Control and Fast Protection for High Power IGBTs By Vinod John; B-S. Suh; T. A. Lipo	[View] [Download]
Abstract: Active gate drive and fault protection technology can be used to obtain high performance switching and fault protection characteristics in IGBTs. This paper presents a three-stage active turn-on and turn-off gate driver integrated with a fast fault current limiting circuit. The proposed three-stage active gate drive technique is verified to be able to operate under the wide range of temperature conditions experienced by the devices. The integrated fast fault protection circuit allows the active gate drive to operate at a higher on-state gate voltage, which leads to reduction of the conduction loss. Also, due to the fault management strategy the active drive circuit can considerably improve the fault endurance capability of the device.

	Anomalous Overvoltage Oscillations in the Reverse Recovery of Power p-i-n Diodes: Experiments and Simulations By P. Cova; R. Menozzi; M. Pasqualetti; M. Portesine; R. Scicolone; B. Zerbinati	[View] [Download]
Abstract: This work studies the anomalous oscillations (snap-off) sometimes observed during p-i-n diode switch-off, a serious reliability issue for snubberless operation. The turn-off behavior has been measured and simulated for different diode structures. A correlation is sought among the snap-off threshold, the recovery softness, and the diode technological-geometrical features.

	Behaviour of Fast and Ultra-Fast 600V Punch-Through IGBT under Unclamped Inductive Switching Stress By S. Azzopardi; J.M. Vinassa; C. Zardini	[View] [Download]
Abstract: In this paper, we investigate the behavior of Fast and Ultra-Fast 600V Punch-Through IGBT under Unclamped Inductive Switching stress. These high stress conditions occur when the freewheeling diode fails. As a consequence, the device is submitted to high current and high voltage simultaneously. In order to investigate the behaviour of Fast and Ultra-Fast 600V Punch-Through IGBT, we propose to analyze the effect of the peak collector current and the temperature values. Under the chosen test conditions, the results show on one hand that the temperature influences the dynamic breakdown voltage value and also the collector-emitter voltage shape and on the other hand, that the Ultra-Fast 600V Punch-Through IGBT presents a higher ruggedness than the Fast 600V Punch-Through IGBT.

	Fast Isolated IGBT Driver with Desaturation Protection and Fault Feedback By A. Van den Bossche; V. Valchev; L. Clotea; J. Melkebeek	[View] [Download]
Abstract: The greater current and voltage handling capability of the modern power IGBT's require smart, high voltage isolated gate drive circuits, specifically designed to drive and protect them. The essential requirements of IGBT gate drive circuits in various operation conditions including bridge configurations have been analysed. Derivation of an isolated power supply, methods for over-current protection and the characteristics of the drive output stage are discussed and reliable solutions proposed. The proposed IGBT gate drive circuit is realised by discrete devices and has a low loss floating supply, a desaturation protection realising short circuit protection and current limiting and galvanic isolated fault feedback signal.

	High-voltage Cascode Monolithic Switches in QRC Applications By G. Belverde; A. Galluzzo; M. Melito; S. Musumeci; A. Raciti	[View] [Download]
Abstract: In this paper it is presented a new monolithic device suitable for high-voltage applications based on a bipolar-Power MOSFET cascode connection. The basic device features of this smart-power, emitter-switching component, are described both in terms of physical structure, and electrical performances. The device behaviour is tested in Zero-Voltage (ZV) applications as a benchmark to exp^lore the capability of this high-voltage high-frequency switch. The experimental tests are carried out in particular in a DC-DC boost quasi-resonant converter (QRC) in order to better understanding the improvements and constraints deriving in the actual use of the new component. Finally, the frequency limit of the tested device is compared with those of Power MOSFET and IGBT devices determined in the same application.

	IGBTs and Schottky diodes in high power high frequency applications By F. Kleveland; T. Undeland; J.K. Langelid	[View] [Download]
Abstract: This paper presents transistor measurements made on an inverter with series resonant load, where the switching frequency varies slightly above the resonant frequency (inductive mode) and below the resonant frequency (capacitive mode). The conditions under capacitive mode is of special interest because the reverse current prior to turn off may reduce the IGBT’s stored charge and thereby reduce the switching losses. In this paper we investigate the effect this reverse current has on both the IGBT’s stored charge and switching losses. In the test circuit, the free wheeling diodes are realized through series connections of Schottky diodes.

	Long-term Evolution of Power IGBT Component - Experiment and Theory By A. Bouzourene; G. Rojat; P-J. Viverge; G. Grellet	[View] [Download]
Abstract: This paper presents results about the ageing process in the IGBT power transistor. In using the HTGB (High Temperature Gate Bias) test, we observe that the threshold voltage (VT) increases as the component ages. Then with the aid of this experimental result and the published theories on trapped charge process we developed the first mathematical model of the evolution of this electric parameter (VT) depending on test conditions and ageing time (tstress). The ageing time dependence appears in a logarithm form such as VT (tstress) = VT (0) + A Log10 (Btstress) and give quite good agreement with experimental results. The coefficients depend on test conditions, we discuss this influence to try to improve the model.

	Performance Evaluation of Series Connected IGBT Devices By G. Belverde; A. Galluzzo; M. Melito; S. Musumeci; A. Raciti	[View] [Download]
Abstract: A successful use of series connected strings of MOSFETs or IGBTs requires equalizing the dynamic and static voltage sharing across the devices. The dynamic voltage imbalance is generally managed via the slope control of the output voltages by capacitor networks, or by active balancing circuits on the gate side. The main issues that related to the performances of series connected strings of devices are faced. In particular, evaluations are performed among the assisted switching behaviours obtained with conventional load side circuits, and those obtained with a new circuit acting on the gate side. Experimental tests are carried out in order to evaluate the impact of the actual control actions on the devices, with reference to the power consumption, the commutation times, and the drive requirements. Commutations of a single switch are used as reference to compare the performances of multiple switch connections, in case of an equal voltage blocking capability of the single and the multiple switches. Advantages and disadvantages of the assisted transient switching are treated extensively, in order to acquire a deeper insight on the industrial feasibility of the proposed active voltage sharing circuit.

	Serial Connected Active Voltage Clamping By Y. Lausenaz; D. Chatroux; J-F. Villard; J-M. Li; D. Lafore; L. Garnier	[View] [Download]
Abstract: The new post project for uranium enrichment SILVA needs specific power converters. The LETC laboratory of the C.E.A. in Pierrelatte has been studying these since 5 years. The aim of this laboratory consists in developing high voltage solid-state converters using a large number of small standard solid-state components (MOSFETs, IGBTs, thyristors and diodes) connected in series. In these associations, voltage balancement system are not used, but the voltage is limited on each stage in its safety area by clamping protection. This paper describes different voltage clamping systems, active clamping technique and their association in series

	Three-Level High-Power Inverters with IGCT and IGBT Elements Compared on the Basis of Measurements of the Device Losses By E. U. Krafft; A. Steimel; J. K. Steinke	[View] [Download]
Abstract: Voltage source inverter systems equipped with IGBT and IGCT devices contend in the field of medium and high voltage and high-power applications. Measurements in a synthetic test circuit deliver parameters for the comparison of high-power medium-voltage three-level inverters employing these devices. The goal is a trade-off of output power and efficiency vs. switching frequency of the concepts snubberless IGBT, IGCT with di/dt-limitation and - aiming at series connection - IGCT with additional dv/dt-snubbers.