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Simulation and Experimental Results of Irradiated Power Diodes
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| Author(s) |
R. Siemieniec; D. Schipanski; W.Südkamp; J.Lutz |
| Abstract |
An advanced recombination model based on the Shockley-Read-Hall-statistics with full trap
dynamics is used for the simulation of irradiated power diodes. The model makes use of the rate
equations which also take into account the dynamic effects in the space charge region of the power
devices. The high-level lifetime calculated from DLTS (Deep Level Transient Spectroscopy) data
does not agree well with the lifetime determined by lifetime measurements. An agreement is achieved
by means of a temperature dependent capture coefficient of the dominating recombination center
E(90K), calculated from the lifetime measurement results. Simulations and measurements are done to
determine the dependencies of reverse recovery current maximum and reverse recovery charge on
temperature. By use of the calculated capture coefficient, a sufficient agreement between simulation
and measurement is achieved. |
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| Filename: | EPE1999 - PP00536 - Siemieniec.pdf |
| Filesize: | 97.38 KB |
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| Type |
Members Only |
| Date |
Last modified 2004-04-01 by System |
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