| Abstract |
Originally, the introduction of pn-junctions below the metal semiconductor interface of a Schottky
diode was intended as a screening against high electric field strengths [1]. But the so called merged
PIN Schottky (MPS) diode also provides a better trade-off between on-state voltage drop and turn-off
losses as a consequence of lower junction voltage and reduced anode emitter efficiency [2, 3].
In 1992 International Rectifier Corp. introduced the first commercially available diode based on this
concept [3]. The superior properties of those devices have been improved further by means of axial
lifetime engineering [4-7]. The final result is an IGBT companion diode with low forward voltage
drop, a positive temperature coefficient, soft reverse recovery, and high ruggedness. This paper
shows the results of the new 1200V/75A device (active area: 48.6mm2). |
