| Abstract |
This paper presents switching behavior measurements of the CoolMOS. The measurements are made on a singleplus inverter with an inductive load. The main focus of this work is the turn-off process, which differs from the ordinary MOSFET behavior. From an application engineer point of view, the main difference compared to an ordinary MOSFET is the altered drain-source capacitance values. Especially the ten-fold increase of drain-source capacitance at low voltages has a strong impact on the device turn-off characteristic, the CoolMOS has not the traditional gate controlled turn-off. In fact, the turn-off is device controlled rather than gate controlled as it is in normal MOSFETs. The main issues covered is the turn-off time delay from channel turn-off till voltage rise and the voltage transient itself. In addition to this, measurements on the parasitic free wheeling diode is presented. |
