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EPE 2013 - DS2b: Wide Bandgap Power Devices, Simulation, Protection and Control
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2013 ECCE Europe - Conference > EPE 2013 - Topic 01: Active devices > EPE 2013 - DS2b: Wide Bandgap Power Devices, Simulation, Protection and Control
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	5kW phase-shifted full-bridge converter with current doubler using normally-off SiC JFETsdesigned for 98\% efficiency   By Torok LAJOS, Stig MUNK-NIELSEN, Szymon BECZKOWSKI	[View]   [Download]
Abstract: In this paper a 5kW step-down converter for low-voltage high-current application is presented usingnormally-off SiC JFETs as high voltage power switches, operating with efficiency close to 98\%. Differentlow voltage side rectification solutions and loss estimations are also presented. As results show higherpower density and efficiency can be achieved in medium- or high-power DC-DC applications by replacingsilicone power devices with SiC alternatives.
	A Data Driven Model for Silicon Carbide JFET with Thermal Effect   By Ping ZHU, Li WANG, Ligang RUAN, Jian-hua QIN	[View]   [Download]
Abstract: A data driven model with thermal effects is proposed for normally-off SiC JFET in this paper. The novel feature of the model is that this modeling method saves the trouble of obtaining the physical parameters and the temperature of SiC JFET is taken into account. These are particularly important because the device’s physical parameters on materials and dimensions are hardly to be obtained and temperature has effects on the other major parameters. The model is implemented in SABER based on the characteristics of the datasheet and the test data. Both simulation and experiment tests are carried out for the research of static characteristics, gate switching characteristics and short-circuit characteristics, which verify the accuracy of the model. Besides, method of data driven modeling can also be applied to the other modern power devices.
	A new concept of enhanced-mode GaN HEMT using fluorine implantation in the GaN layer   By Saleem HAMADY, Frederic MORANCHO, Bilal BEYDOUN, Patrick AUSTIN, Mathieu GAVELLE	[View]   [Download]
Abstract: In this paper, a new concept of normally-off HEMT is proposed: it uses for the first time the implantation of Fluorine ions in the GaN layer below the AlGaN/GaN interface rather than in the AlGaN layer. Simulation results show that the proposed method is more effective when it comes to the Fluorine concentration required to achieve normally-off operation.
	A Novel Electro-Thermal Model for Wide Bandgap Semiconductor Based Devices   By Nicolae-Cristian SINTAMAREAN, Frede BLAABJERG, Huai WANG	[View]   [Download]
Abstract: This paper propose a novel Electro-Thermal Model for the new generation of power electronics WBG-devices (by considering the SiC MOSFET-CMF20120D from CREE), which is able to estimate the device junction and case temperature. The Device-Model estimates the voltage drop and the switching energies by considering the device current, the off-state blocking voltage and junction temperature variation. Moreover, the proposed Thermal-Model is able to consider the thermal coupling within the MOSFET and its freewheeling diode, integrated into the same package, and the influence of the ambient temperature variation. The importance of temperature loop feedback in the estimation accuracy of device junction and case temperature is studied. Furthermore, the Safe Operating Area (SOA) of the SiC MOSFET is determined for 2L-VSI applications which are using sinusoidal PWM. Thus, by considering the heatsink thermal impedance, the switching frequency and the ambient temperature, the maximum allowed drain current is determined according to the thermal limitations of the device. Finally, dynamic study of MOSFET junction and case temperature is also performed by considering the variation of the ambient temperature and of the load current.
	An all SiC MOSFET High Performance PV Converter Cell   By Dipankar DE, Adane SOLOMON, Andrew TRENTIN, Alberto CASTELLAZZI, Masataka MINAMI, Takashi HIKIHARA	[View]   [Download]
Abstract: Recent studies have pointed out the benefits of using Silicon Carbide (SiC) devices in photo-voltaicpower conversion. In Particular, SiC Power MOSFET technology has greatly advanced over the lastyears and has presently reached sufficient maturity to stimulate a concrete interest in the developmentof power conversion circuits based entirely on this technology, in view of the clear potentialadvantages it offers over alternative SiC device technologies (e.g., JFET, BJT). This paper presents athorough characterization of an all SiC MOSFET based single-phase bi-directional switched neutralpoint-clamped (BSNPC) three level inverter, in which, for the first time, SiC Power MOSFETs ofdifferent voltage ratings (1200 and 600V) are used. A parametric experimental characterization of thepower cell performance is carried out, separating the effects of output power, heat-sink temperatureand switching frequency and load variations by means of bespoke heat-sink design. The effect ofrelying exclusively on the MOSFET body-diode for inductive load current freewheeling is criticallyassessed against usage of an external SiC Schottky diode. The experimental results are compared witha mixed approach design, where Silicon (Si) devices are used for the lower voltage switches and SiCMOSFETs are kept for the higher voltage ones, deriving a clear indication of the superior possibilitiesoffered by SiC Power MOSFETs for improved efficiency, power density and reliability, key aspects ofpower electronics technology evolution.
	Analysis and experimental evaluation of two low loss auxiliary circuits for the series connection of IGBT devices   By Igor BARAIA, Inigo ATUTXA, Silverio ALVAREZ, Mikel MAZUELA	[View]   [Download]
Abstract: The series connection of IGBTs is necessary when the blocking voltage requirements are higher than the rated voltage of commercially available IGBTs. However, voltage unbalances caused by different switching behaviors during the turn off process of series connected IGBTs could lead to the failure of one IGBT if it exceeds its maximum blocking voltage. This paper demonstrates that the proper operation of series connected IGBTs can be achieved using simple and low loss auxiliary switching circuits. In the first part of the paper an analysis of the problems related to the series connection of IGBT devices is provided. In the second part, two effective and low loss voltage balancing methods are analyzed and experimentally verified. Those methods guarantee the safe operation of the series connected IGBTs during the switching transient and especially during the tail current periods.
	Bipolar Reverse Recover Behavior of the Body–Diode of a SiC JFET   By Tobias APPEL, Hans-Guenter ECKEL	[View]   [Download]
Abstract: This paper investigates the parasitic turn on during the reverse recovery of the body diode of the normallyon 1200 V SiC JFET. During the reverse recovery flows a hole current through the space charge region.The hole current is increasing the charge in the space charge region and the gradient of electrical fieldincreases. A higher gradient of electrical field with the same switching speed causes a higher currentthrough the miller capacitance. Due to this there is a increase in parasitic turn-on. This theory is con-firmed by the analyses of experiments.
	Characterization and comparison of 1.2 kV SiC power semiconductor devices   By Christina DIMARINO	[View]   [Download]
Abstract: This paper seeks to provide insight into state-of-the-art 1.2 kV Silicon Carbide (SiC) power semiconductor devices, including the MOSFET, BJT, SJT, and normally-on and normally-off JFET. Both commercial and sample devices from the semiconductor industry’s well-known manufacturers; namely Cree, GE, ROHM, Fairchild, GeneSiC, Infineon, and SemiSouth, are evaluated in this study. To carry out this work, static characterization of each device is performed under increasing temperatures (25-200 ºC). Dynamic characterization is also conducted through double-pulse tests. Accordingly, the paper describes the experimental setup used and the different measurements conducted, which comprise: threshold voltage, current gain, specific on-resistance, and the turn on and turn off switching energies. For the latter, the driving method used for each device is described in detail. Furthermore, for the devices that require on-state dc currents, driver losses are also taken into consideration. Key trends and observations are reported in an unbiased manner throughout the paper and summarized in the conclusion.
	Experimental investigations of static and transient current sharing of parallel connected Silicon Carbide MOSFETs   By Diane-Perle SADIK, Juan COLMENARES, Dimosthenis PEFTITSIS, Jang-Kwon LIM, Jacek RABKOWSKI, Hans-Peter NEE	[View]   [Download]
Abstract: An Experimental performance analysis of a parallel connection of two 1200/80 mΩ silicon carbide SiC MOSFETs is presented. Static parallel connection was found to be unproblematic. The switching performance of several pairs of parallel-connected MOSFETs is shown employing a common simple totem-pole driver. Good transient current sharing and high-speed switching waveforms with small oscillations are presented. To conclude this analysis, a dc/dc boost converter using parallel-connected SiC MOSFETs is designed for stepping up a voltage from 50 V to 560 V. It has been found that at high frequencies, a mismatch in switching losses results in thermal unbalance between the devices.
	Experimental Study of Parasitic Inductance Influence on SiC MOSFET Switching Performance in Matrix Converter   By Saeed SAFARI, Alberto CASTELLAZZI, Pat WHEELER	[View]   [Download]
Abstract: This paper presents an experimental parametric study of parasitic inductance influence on SiCMOSFET switching waveforms in matrix converter. The two most critical parasitic inductances havebeen studied and compared in terms of their effect on waveform ringing, switching loss and devicestress. Knowledge about the effects of parasitic inductances on the switching behavior serves as animportant basis for the design guideline of fast switching matrix converter.
	Improvement of IGBT Model Characterization with Experimental Tests   By Tatu MUSIKKA, Liudmila POPOVA, Raimo JUNTUNEN, Mika LOHTANDER, Olli PYRHONEN, Juha PYRHONEN, Pertti SILVENTOINEN, Kari MAULA	[View]   [Download]
Abstract: The dynamic IGBT model is characterized with a circuit simulator characterization tool by utilizing datasheet information and after that the model is tuned by using data from experimental measurements. The circuit simulator simulation results from both models are compared with the experimental results and the possible accuracy improvements are reported. The main research question of this work is how well these models can describe the semiconductor loss behaviour and the different voltage and current overshoots in IGBT switching event and what is the usability of the models. These issues are mainly observed and compared near the nominal collector current, but some example results with higher and smaller current are presented as well. A commercial software tool Simplorer 11 is used for the simulations and the component that is used in the comparison is FZ400R17KE4. Experimental test measurements are performed with an IGBT double pulse tester system. The comparison between the simulation models and the experimental data is reported and conclusions are made. The simulation results show that the characterized IGBT model is usable for voltage behaviour investigation of the IGBT in the hard switched operation. In addition, the measurement data characterized model achieves an acceptable accuracy considering the switching losses.
	Investigation of 1.2 kV SiC MOSFETs for Aeronautics Applications   By Dhouha OTHMAN, Stephane LEFEBVRE, Mounira BERKANI, Zoubir KHATIR, Ali IBRAHIM, Arezki BOUZOURENE	[View]   [Download]
Abstract: This paper evaluates robustness and performances of two types of 1.2 kV SiC MOSFETs in order to investigate these power devices for medium power aeronautics applications. The first part focuses on switching performances with effects of gate resistance and load current level. The second part focuses on robustness results showing the weakness of the gate under short-circuit test.
	Modeling Power Converters using Hard Switched Silicon Carbide MOSFETs and Schottky Barrier Diodes   By Petros ALEXAKIS, Olayiwola ALATISE, Philip MAWBY, Ran LI	[View]   [Download]
Abstract: The emergence of silicon carbide MOSFETs and Schottky Barrier Diodes (SBD) at higher voltage andcurrent ratings is opening up new possibilities in the design of energy dense power converters. One ofthe main advantages of these wide bandgap unipolar devices is the use of fast switching to enable thesize reduction of passive components. However, packaging constraints like parasitic inductances limithow fast the MOSFETs and diodes can switch, because of high frequency electromagnetic oscillationsor ringing. Ringing is a reliability concern as it stresses the devices and causes additional losses to theswitching losses. In this paper, a framework of power converter design is introduced based on theanalytical modelling of current commutation between the MOSFET and the diode. The analysis of themodel is done in the frequency domain which lends it to easy use and computational efficiency. Theimpact of the parasitic inductances on the switching transients have been analyzed. The models arecompared with experimental measurements and are shown to provide fast and accurate analysis of theswitching transients. The results show the necessity of accounting for ringing when modelling powerlosses.
	NEW TERMINATION ARCHITECTURE FOR 1700 V DIAMOND SCHOTTKY DIODE   By Houssam ARBESS, Karine ISOIRD, Saleem HAMADY	[View]   [Download]
Abstract: New field plate architecture is applied to pseudo vertical diamond Schottky diode. Using several field plate architectures, a TCAD simulation is realized in order to reduce the electric field in the dielectric while maintaining high breakdown voltage. Firstly and after simple variations in the field plate architecture, the breakdown voltage was improved from 1632 V to 2141 V at 700 K. Concerning Emax in the dielectric, we obtained a decreasing of maximum electric field from 57 to 18 MV/cm.
	On Understanding Switching and EMI performance of SiC Power JFETs to Design a 75 W High Voltage Flyback Converter   By Supratim BASU, Tore. M UNDELAND	[View]   [Download]
Abstract: Normally-off three-terminal SiC VJFETs having excellent low switching loss, high temperature and high voltage rating are commercially available. This paper compares the switching and EMI performance of SiC Power JFETs to a standard MOSFET on a 75 W high voltage flyback converter and highlights suitable design strategies needed for using a SiC Power JFET.
	On-Line [TJ, Vce] Monitoring of IGBTs Stressed by Fast Power Cycling Tests   By Amgad RASHED, Francois FOREST, Jean-Jacques HUSELSTEIN, Thierry MARTIRE, Philippe ENRICI	[View]   [Download]
Abstract: This paper describes a part of a larger supervision system able to monitor the on-state voltage VCE and the junction temperature TJ of IGBT in operation. That system is associated to an ageing test bench stressing IGBT modules by power cycling. All along the ageing test, it is necessary to supervise VCE, always measured in the same conditions of junction temperature and collector current, in order to detect possible degradations of wire bonds and/or emitter metallization.In addition, the thermal swing amplitude of the power cycling must be adjusted to realize a given ageing protocol. That requires measuring the junction temperature evolution on a power cycle to choose the initial electrical conditions providing the wished temperature swing and then, to regularly verify the stability of this thermal stress during the ageing test.The temperature measurement needed for both monitoring is carried out by means of VCE measurement at low current level (100mA), that intrinsic on-stage voltage being a well-known thermo sensitive parameter.The first section describes briefly the ageing test bench, that places the power IGBT modules in operating conditions close to those of real world (PWM operations), and presents the thermal stress protocol applied to the devices, the aim being to define the context in which the measurements have to be made.The second section presents, on the one hand, the principle of an automated measurement of VCE(100A-125°C), made in steady-state, to detect a possible degradation of the top part of IGBT dies, on the other hand, the dynamic measurement of the junction temperature in operation, i.e. in power cycling conditions generated by the PWM modulation. In both cases, experimental results are shown that demonstrate the feasibility and the good accuracy of these monitoring methods.
	Optimised IGBT Turn-off Under Active Voltage Control in PEBB Applications   By Xin YANG, Patrick PALMER	[View]   [Download]
Abstract: Active Voltage Control (AVC) is an implementation of classic Proportional-Derivative (PD) control and multi-loop feedback control to force an IGBT to follow a pre-set switching trajectory. Previously, AVC was mainly used for controlling series-connected IGBTs in order to enable voltage balance between IGBTs. In this paper, the nonlinear IGBT turn-off transient is further discussed and the turn-off of a single IGBT under AVC is further optimizedoptimised in order to meet the demand of Power Electronic Building Block (PEBB) applications.
	Performance Evaluation of Bidirectional SiC Switch Devices for Matrix Converter   By Saeed SAFARI, Alberto CASTELLAZZI, Pat WHEELER	[View]   [Download]
Abstract: With the commercial availability of SiC BJT and MOSFET, their acceptance are expected grows in consideration to the excellent low switching loss, high temperature operation and high voltage rating capabilities of these devices. The objective of this paper is to assess the performance of bidirectional SiC switch devices within matrix converter. Two 2-phase to 1-phase matrix converters will be constructed with SiC BJT and SiC MOSFET. The improved performance of the SiC switch devices is assessed with reference to measured switching waveforms. Furthermore, the effect of two different SiC switch devices on the overall performance of the matrix converter in high frequency and temperature with particular attention to power circuit losses is investigated.
	Reliability of Discrete Power Semiconductor Packages and Systems – D2Pak and CanPAK in Comparison   By Kay HOFMANN, Christian HEROLD, Menia BEIER, Josef LUTZ	[View]   [Download]
Abstract: The reliability of discrete power semiconductor packages is getting more and more important in regard to the increasing number of power applications in the low power range. Therefore it is necessary to get more information and details on reliability of discrete packages and systems by performing reliability tests as well as simulations. In this paper the chosen approach and first results of simulations and tests are described on D2Pak and CanPAK systems as often used discrete power semiconductor packages.
	Serializing off-the-self MOSFETs by Magnetically Coupling Their Gate Electrodes   By Emmanouil DIMOPOULOS, Stig MUNK-NIELSEN	[View]   [Download]
Abstract: While the semiconductor industry struggles with the inherent trade-offs of solid-state devices, serialization of power switches, like the Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) or the Insulated Gate Bipolar Transistor (IGBT), has been proven to be an advantageous alternative to acquire a high-efficient, high-voltage, fast-switching device. More than twenty years of research, on the serialization of solid-state devices, have resulted into several different stacking concepts. Among the prevailing ones, the gate balancing core technique, which has demonstrated very good performance in strings of high-power IGBT modules. In this paper, the limitations of the gate balancing core technique, when employed to serialize low or medium power off-the-shelf switches, are identified via experimental results. A new design specification for the interwinding capacitance of the employed transformer is derived to address those limitations, leading to a revised version of the technique. The effectiveness and the applicability of the revisited gate balancing core technique are verified, via experiments conducted on a string of two off-the-self, non-matched MOSFETs, installed in an inductively loaded step-down converter.
	SiC/GaN Power Semiconductor Devices Inter-electrode Capacitances Characterization Based on Multiple Current Probes   By Ke LI, Arnaud VIDET, Nadir IDIR	[View]   [Download]
Abstract: The characterization of voltage-dependent capacitances of power semiconductor devices is very important for modeling their dynamic performances. A measurement method using multiple current probes has been proposed to characterize inter-electrode capacitances of power devices. The advantage of this method is that it can isolate the measurement devices from the high-voltage DC bias power source. This method has been validated first on SiC JFET to obtain more capacitance dependency information both on high voltage of VDS and on VGS, of which the latter is not included in datasheet. It is then applied on GaN HEMT, to prove its sensibility for a few picofarads capacitances measurement.
	Stray inductance estimation with detailed model of the IGBT module   By Liudmila POPOVA, Raimo JUNTUNEN, Tatu MUSIKKA, Mika LOHTANDER, Pertti SILVENTOINEN, Olli PYRHONEN, Juha PYRHONEN	[View]   [Download]
Abstract: Stray inductances cause various problems in a power inverter and should be appraised and minimized at an early design stage to avoid later required countermeasures and redesign after the device prototype has been built. The stray inductances of the commutation loops of an Active Neutral Point Clamped (ANPC) inverter are estimated in this paper. Detailed model of the Insulated Gate Bipolar Transistor (IGBT) module is created to improve the accuracy of the stray inductance calculation. The influence of the coupling between the IGBT modules and between the IGBT modules and the busbars on the commutation loop inductance is considered. The partial inductances of the components of the commutation loops are estimated by AnSYS Q3D parasitic extractor to calculate the total stray inductance. It is found that the commutation loop inductances of the studied ANPC inverter are overestimated by neglecting the couplings between the IGBT modules and between the IGBT modules and the busbars.
	Test Setup for Long Term Reliability Investigation of Silicon Carbide MOSFETs   By Nick BAKER, Stig MUNK-NIELSEN, Szymon BECZKOWSKI	[View]   [Download]
Abstract: Silicon Carbide MOSFETs are now widely available and have frequently been demonstrated to offer numerous advantages over Silicon based devices. However, reliability issues remain a significant concern in their realisation in commercial power electronic systems. In this paper, a test bench is designed that enables an accelerated power cycling test to be performed on packaged Silicon Carbide MOSFETs (TO-247) under realistic operating conditions. An accelerated power cycling test is then performed, with on-state resistance selected as the observed parameter to detect degradation. On-state resistance is routinely monitored online through the use of an innovative voltage measurement system. The packaged Silicon Carbide MOSFET is shown to exhibit a 25\% increase in on-state resistance as the device ages throughout its lifetime, with the test still on-going.
	Thermal measurement of losses of GaN power transistors for optimization of their drive   By Lionel HOFFMANN, Cyrille GAUTIER, Stephane LEFEBVRE, Francois COSTA	[View]   [Download]
Abstract: In this paper, we present a thermal measurement method of the losses of eGaN-FET power transistor used in one phase leg. The dead-times are important to avoid short-circuit phase, but they can lead to a large part of the total losses because of reverse conduction. Thus, the drive must be optimized according to load current to keep losses at lowest lever.
	Transient robustness testing of silicon carbide (SiC) power MOSFETs   By Asad FAYYAZ, Li YANG, Alberto CASTELLAZZI	[View]   [Download]
Abstract: This paper presents the development of a unified test set-up and experimental results of the robustness characterisation of new generation of silicon carbide (SiC) power MOSFETs. In particular, unclamped inductive switching (UIS) and short-circuit withstand capability (SC) are investigated, with the aim of assessing the actual limits of operation of the devices and highlighting the underlying physical mechanisms. An electro-thermal device model is used to support the experimental analysis and interpret the observations.