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Test Setup for Long Term Reliability Investigation of Silicon Carbide MOSFETs
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| Author(s) |
Nick BAKER, Stig MUNK-NIELSEN, Szymon BECZKOWSKI |
| Abstract |
Silicon Carbide MOSFETs are now widely available and have frequently been demonstrated to offer numerous advantages over Silicon based devices. However, reliability issues remain a significant concern in their realisation in commercial power electronic systems. In this paper, a test bench is designed that enables an accelerated power cycling test to be performed on packaged Silicon Carbide MOSFETs (TO-247) under realistic operating conditions. An accelerated power cycling test is then performed, with on-state resistance selected as the observed parameter to detect degradation. On-state resistance is routinely monitored online through the use of an innovative voltage measurement system. The packaged Silicon Carbide MOSFET is shown to exhibit a 25\% increase in on-state resistance as the device ages throughout its lifetime, with the test still on-going. |
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| Filename: | 0781-epe2013-full-23410336.pdf |
| Filesize: | 353.1 KB |
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| Type |
Members Only |
| Date |
Last modified 2014-02-09 by System |
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