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Thermal measurement of losses of GaN power transistors for optimization of their drive
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| Author(s) |
Lionel HOFFMANN, Cyrille GAUTIER, Stephane LEFEBVRE, Francois COSTA |
| Abstract |
In this paper, we present a thermal measurement method of the losses of eGaN-FET power transistor used in one phase leg. The dead-times are important to avoid short-circuit phase, but they can lead to a large part of the total losses because of reverse conduction. Thus, the drive must be optimized according to load current to keep losses at lowest lever. |
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| Filename: | 0742-epe2013-full-14502050.pdf |
| Filesize: | 1.17 MB |
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| Type |
Members Only |
| Date |
Last modified 2014-02-09 by System |
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