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Experimental investigations of static and transient current sharing of parallel connected Silicon Carbide MOSFETs
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| Author(s) |
Diane-Perle SADIK, Juan COLMENARES, Dimosthenis PEFTITSIS, Jang-Kwon LIM, Jacek RABKOWSKI, Hans-Peter NEE |
| Abstract |
An Experimental performance analysis of a parallel connection of two 1200/80 mΩ silicon carbide SiC MOSFETs is presented. Static parallel connection was found to be unproblematic. The switching performance of several pairs of parallel-connected MOSFETs is shown employing a common simple totem-pole driver. Good transient current sharing and high-speed switching waveforms with small oscillations are presented. To conclude this analysis, a dc/dc boost converter using parallel-connected SiC MOSFETs is designed for stepping up a voltage from 50 V to 560 V. It has been found that at high frequencies, a mismatch in switching losses results in thermal unbalance between the devices. |
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| Filename: | 0613-epe2013-full-14561525.pdf |
| Filesize: | 1.18 MB |
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| Type |
Members Only |
| Date |
Last modified 2014-02-09 by System |
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