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SiC/GaN Power Semiconductor Devices Inter-electrode Capacitances Characterization Based on Multiple Current Probes
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| Author(s) |
Ke LI, Arnaud VIDET, Nadir IDIR |
| Abstract |
The characterization of voltage-dependent capacitances of power semiconductor devices is very important for modeling their dynamic performances. A measurement method using multiple current probes has been proposed to characterize inter-electrode capacitances of power devices. The advantage of this method is that it can isolate the measurement devices from the high-voltage DC bias power source. This method has been validated first on SiC JFET to obtain more capacitance dependency information both on high voltage of VDS and on VGS, of which the latter is not included in datasheet. It is then applied on GaN HEMT, to prove its sensibility for a few picofarads capacitances measurement. |
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| Filename: | 0808-epe2013-full-10482304.pdf |
| Filesize: | 813.6 KB |
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| Type |
Members Only |
| Date |
Last modified 2014-02-09 by System |
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