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Modeling Power Converters using Hard Switched Silicon Carbide MOSFETs and Schottky Barrier Diodes
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| Author(s) |
Petros ALEXAKIS, Olayiwola ALATISE, Philip MAWBY, Ran LI |
| Abstract |
The emergence of silicon carbide MOSFETs and Schottky Barrier Diodes (SBD) at higher voltage andcurrent ratings is opening up new possibilities in the design of energy dense power converters. One ofthe main advantages of these wide bandgap unipolar devices is the use of fast switching to enable thesize reduction of passive components. However, packaging constraints like parasitic inductances limithow fast the MOSFETs and diodes can switch, because of high frequency electromagnetic oscillationsor ringing. Ringing is a reliability concern as it stresses the devices and causes additional losses to theswitching losses. In this paper, a framework of power converter design is introduced based on theanalytical modelling of current commutation between the MOSFET and the diode. The analysis of themodel is done in the frequency domain which lends it to easy use and computational efficiency. Theimpact of the parasitic inductances on the switching transients have been analyzed. The models arecompared with experimental measurements and are shown to provide fast and accurate analysis of theswitching transients. The results show the necessity of accounting for ringing when modelling powerlosses. |
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| Filename: | 0048-epe2013-full-16113643.pdf |
| Filesize: | 741.5 KB |
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| Type |
Members Only |
| Date |
Last modified 2014-02-09 by System |
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