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Bipolar Reverse Recover Behavior of the Body–Diode of a SiC JFET
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| Author(s) |
Tobias APPEL, Hans-Guenter ECKEL |
| Abstract |
This paper investigates the parasitic turn on during the reverse recovery of the body diode of the normallyon 1200 V SiC JFET. During the reverse recovery flows a hole current through the space charge region.The hole current is increasing the charge in the space charge region and the gradient of electrical fieldincreases. A higher gradient of electrical field with the same switching speed causes a higher currentthrough the miller capacitance. Due to this there is a increase in parasitic turn-on. This theory is con-firmed by the analyses of experiments. |
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| Filename: | 0070-epe2013-full-13165665.pdf |
| Filesize: | 194.6 KB |
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| Type |
Members Only |
| Date |
Last modified 2014-02-09 by System |
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