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   Experimental Study of Parasitic Inductance Influence on SiC MOSFET Switching Performance in Matrix Converter   [View] 
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 Author(s)   Saeed SAFARI, Alberto CASTELLAZZI, Pat WHEELER 
 Abstract   This paper presents an experimental parametric study of parasitic inductance influence on SiCMOSFET switching waveforms in matrix converter. The two most critical parasitic inductances havebeen studied and compared in terms of their effect on waveform ringing, switching loss and devicestress. Knowledge about the effects of parasitic inductances on the switching behavior serves as animportant basis for the design guideline of fast switching matrix converter. 
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Filename:0835-epe2013-full-21523358.pdf
Filesize:656.3 KB
 Type   Members Only 
 Date   Last modified 2014-02-09 by System