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On Understanding Switching and EMI performance of SiC Power JFETs to Design a 75 W High Voltage Flyback Converter
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| Author(s) |
Supratim BASU, Tore. M UNDELAND |
| Abstract |
Normally-off three-terminal SiC VJFETs having excellent low switching loss, high temperature and high voltage rating are commercially available. This paper compares the switching and EMI performance of SiC Power JFETs to a standard MOSFET on a 75 W high voltage flyback converter and highlights suitable design strategies needed for using a SiC Power JFET. |
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| Filename: | 0473-epe2013-full-17264941.pdf |
| Filesize: | 910.2 KB |
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| Type |
Members Only |
| Date |
Last modified 2014-02-09 by System |
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