| |
A new concept of enhanced-mode GaN HEMT using fluorine implantation in the GaN layer
| [View]
[Download]
|
| Author(s) |
Saleem HAMADY, Frederic MORANCHO, Bilal BEYDOUN, Patrick AUSTIN, Mathieu GAVELLE |
| Abstract |
In this paper, a new concept of normally-off HEMT is proposed: it uses for the first time the implantation of Fluorine ions in the GaN layer below the AlGaN/GaN interface rather than in the AlGaN layer. Simulation results show that the proposed method is more effective when it comes to the Fluorine concentration required to achieve normally-off operation. |
| Download |
| Filename: | 0260-epe2013-full-15183985.pdf |
| Filesize: | 238.3 KB |
|
| Type |
Members Only |
| Date |
Last modified 2014-02-09 by System |
| |
 |