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Transient robustness testing of silicon carbide (SiC) power MOSFETs
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| Author(s) |
Asad FAYYAZ, Li YANG, Alberto CASTELLAZZI |
| Abstract |
This paper presents the development of a unified test set-up and experimental results of the robustness characterisation of new generation of silicon carbide (SiC) power MOSFETs. In particular, unclamped inductive switching (UIS) and short-circuit withstand capability (SC) are investigated, with the aim of assessing the actual limits of operation of the devices and highlighting the underlying physical mechanisms. An electro-thermal device model is used to support the experimental analysis and interpret the observations. |
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| Filename: | 0771-epe2013-full-21231336.pdf |
| Filesize: | 1.248 MB |
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| Type |
Members Only |
| Date |
Last modified 2014-02-09 by System |
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